SGP20N60HS
SGW20N60HS
Power Semiconductors
7 Rev 2.4 Sep 08
E, SWITCHING ENERGY LOSSES
0A 10A 20A 30A 40A
,0mJ
1,0mJ
,0mJ
E
ts
*
E
off
*) E
on
include losses
due to diode recovery
E
on
*
E, SWITCHING ENERGY LOSSES
0Ω 10Ω 20Ω 30Ω 40Ω
0,0 mJ
0,5 mJ
1,0 mJ
E
ts
*
E
on
*
*) Eon include losses
due to diode recovery
E
off
I
C
, COLLECTOR CURRENT
R
G
, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T
J
=150°C,
V
CE
=400V, V
GE
=0/15V, R
G
=16Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T
J
=150°C,
V
CE
=400V, V
GE
=0/15V, I
C
=20A,
Dynamic test circuit in Figure E)
E, SWITCHING ENERGY LOSSES
0°C 50°C 100°C 150°C
,00mJ
,25mJ
,50mJ
,75mJ
E
ts
*
E
on
*
*) E
on
include losses
due to diode recovery
E
off
Z
thJC
, TRANSIENT THERMAL RESISTANCE
1µs 10µs 100µs 1ms 10ms 100ms
10
-4
K/W
10
-3
K/W
10
-2
K/W
10
-1
K/W
10
0
K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
T
J
, JUNCTION TEMPERATURE t
P
, PULSE WIDTH
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, V
CE
=400V,
VGE=0/15V, I
C
=20A, R
G
=16Ω,
Dynamic test circuit in Figure E)
Figure 16. IGBT transient thermal resistance
(D = t
p
/ T)
C
1
=
1
/
R
1
R
1
R
2
C
2
=
2
/
R
2
R ,(K/W)
τ
, (s)
0.1882 0.1137
0.3214 2.24*10
-2
0.1512 7.86*10
-4
0.0392 9.41*10
-5
