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PD57018S

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
1/18March, 7 2003
PD57018
PD57018S
RF POWER TRANSISTORS
The
LdmoST
Plastic FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P
OUT
= 18 W WITH 16.5 dB gain @ 945 MHz /
28V
• NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD57018 is a common source N-Channel, en-
hancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 28V in common source mode at frequencies of
up to 1 GHz. PD57018 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS tech-
nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD57018’s su-
perior linearity performance makes it an ideal so-
lution for base station applications.
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
PowerSO-10RF
(formed lead)
ORDER CODE
PD57018
BRANDING
PD57018
PowerSO-10RF
(straight lead)
ORDER CODE
PD57018S
BRANDING
PD57018S
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
°
C)
Symbol Parameter Value Unit
V
(BR)DSS
Drain-Source Voltage 65 V
V
GS
Gate-Source Voltage ± 20 V
I
D
Drain Current 2.5 A
P
DISS
Power Dissipation (@ Tc = 70°C) 31.7 W
Tj Max. Operating Junction Temperature 165 °C
T
STG
Storage Temperature -65 to +150 °C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance 3.0 °C/W
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
PD57018 - PD57018S
2/18
ELECTRICAL SPECIFICATION (T
CASE
= 25°C)
STATIC
DYNAMIC
Symbol Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
V
GS
= 0 V I
DS
= 10 mA
65 V
I
DSS
V
GS
= 0 V V
DS
= 28 V
1 µA
I
GSS
V
GS
= 20 V V
DS
= 0 V
1 µA
V
GS(Q)
V
DS
= 28 V
I
D
= 100 mA
2.0 5.0 V
V
DS(ON)
V
GS
= 10 V I
D
= 1.25 A
0.9 V
g
FS
V
DS
= 10 V I
D
= 1 A
1 mho
C
ISS
V
GS
= 0 V V
DS
= 28 V f = 1 MHz
34.5 pF
C
OSS
V
GS
= 0 V V
DS
= 28 V f = 1 MHz
21 pF
C
RSS
V
GS
= 0 V V
DS
= 28 V f = 1 MHz
1.3 pF
Symbol Test Conditions Min. Typ. Max. Unit
P
OUT
V
DD
= 28 V I
DQ
= 100 mA f = 945 MHz
18 W
G
PS
V
DD
= 28 V I
DQ
= 100 mA P
OUT
= 18 W f = 945 MHz
14 16.5 dB
η
D
V
DD
= 28 V I
DQ
= 100 mA P
OUT
= 18 W f = 945 MHz
50 53 %
Load
mismatch
V
DD
= 28 V I
DQ
= 100 mA P
OUT
= 18 W f = 945 MHz
ALL PHASE ANGLES
10:1 VSWR
PIN CONNECTION
GATE
SOURCE
DRAIN
SC15200
Typical Input
Impedance
Typical Drain
Load Impedance
G
D
S
Z
DL
Zin
SC13140
PD57018S
FREQ. MHz
Z
IN
(Ω)Z
DL
(Ω)
925 .35 - j .53 1.92 + j 4.13
945 .53 - j .86 2.03 + j 2.81
960 .50 - j .52 2.04 + j 2.57
IMPEDANCE DATA
PD57018
FREQ. MHz
Z
IN
(Ω)Z
DL
(Ω)
925 .52 - j 1.75 3.04 + j .10
945 .49 - j 2.38 3.14 + j .76
960 .48 - j 2.36 3.12 + j .27
IMPEDANCE DATA
Obsolete Product(s) - Obsolete Product(s)
3/18
PD57018 - PD57018S
-25 0 25 50 75 100
Tcase, CASE TEMPERATURE (°C)
0.98
0.99
1
1.01
1.02
VGS, GATE-SOURCE VOLTAGE (NORMALIZED)
I
D
= .75A
I
D
= 1A
I
D
= 2A
I
D
=1.25A
I
D
= 1.75A
V
DS
= 10 V
I
D
= 1.5 A
TYPICAL PERFORMANCE
Capacitance vs. Drain Voltage
0 1020304050
VDS, DRAIN-SOURCE VOLTAGE (V)
0.1
1
10
100
C, CAPACITANCE (pF)
Ciss
Coss
Crss
Drain Current vs. Gate Voltage
2.5 3 3.5 4 4.5 5
Vgs, GATE-SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Id, DRAIN CURRENT (A)
VDS = 28 V
T
CASE = 25°C
Gate-Source Voltage vs. Case Temperature
Safe Operating Area
1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V)
0.1
1
10
Id, DRAIN CURRENT (V)
Tc = 70 ºC
Tc = 25 ºC
Tc = 100 ºC
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18

PD57018S

Mfr. #:
Buy PD57018S
Manufacturer:
STMicroelectronics
Description:
RF MOSFET Transistors N-Ch 65 Volt 2.5 Amp
Lifecycle:
New from this manufacturer.
Delivery:
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