VS-8CWH02FNTRHM3

VS-8CWH02FNHM3
www.vishay.com
Vishay Semiconductors
Revision: 02-Aug-12
1
Document Number: 94741
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Hyperfast Rectifier, 2 x 4 A FRED Pt
®
FEATURES
Hyperfast recovery time
175 °C max. operating junction temperature
Output rectification freewheeling
Low forward voltage drop reduced Q
rr
and
soft recovery
Low leakage current
AEC-Q101 qualified
Meets JESD 201 class 1A whisker test
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS inverters or as freewheeling diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce
over dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package D-PAK (TO-252AA)
I
F(AV)
2 x 4 A
V
R
200 V
V
F
at I
F
0.95 V
t
rr
(typ.) 23 ns
T
J
max. 175 °C
Diode variation Common cathode
Base
common
cathode
Common
cathode
Anode Anode
2
1
2
3
D-PAK (TO-252AA)
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage V
RRM
200 V
Average rectified forward current I
F(AV)
T
C
= 164 °C 8
A
Non-repetitive peak surge current per leg I
FSM
T
J
= 25 °C 80
Operating junction and storage temperatures T
J
, T
Stg
- 65 to 175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 200 - -
V
Forward voltage per leg V
F
I
F
= 4 A - 0.87 0.95
I
F
= 8 A - 0.95 1.10
I
F
= 4 A, T
J
= 150 °C - 0.71 0.80
I
F
= 8 A, T
J
= 150 °C - 0.8 1.0
Reverse leakage current per leg I
R
V
R
= V
R
rated - - 4
μAT
J
= 125 °C, V
R
= V
R
rated - - 40
T
J
= 150 °C, V
R
= V
R
rated - - 80
Junction capacitance per leg C
T
V
R
= 200 V - 17 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8 - nH
VS-8CWH02FNHM3
www.vishay.com
Vishay Semiconductors
Revision: 02-Aug-12
2
Document Number: 94741
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 23 27
nsT
J
= 25 °C
I
F
= 4 A
dI
F
/dt = 200 A/μs
V
R
= 160 V
-20-
T
J
= 125 °C - 27 -
Peak recovery current I
RRM
T
J
= 25 °C - 2 -
A
T
J
= 125 °C - 3.4 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 20 -
nC
T
J
= 125 °C - 46 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 65 - 175 °C
Thermal resistance,
junction to case
per leg
R
thJC
-2.73.2
°C/W
per device - 1.35 1.6
Approximate weight
0.3 g
0.01 oz.
Marking device Case style D-PAK 8CWH02FNH
VS-8CWH02FNHM3
www.vishay.com
Vishay Semiconductors
Revision: 02-Aug-12
3
Document Number: 94741
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Forward Voltage Drop - V
F
(V)
Instantaneous Forward Current - I
F
(A)
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0.1
1
10
100
Tj = 25°C
Tj = 125°C
Tj = 175°C
Reverse Voltage - V
R
(V)
Reverse Current - I
R
(μA)
50 100 150 200
0.0001
0.001
0.01
0.1
1
10
100
Tj = 25°C
Tj = 175°C
Tj = 150°C
Tj = 125°C
Tj = 100°C
Tj = 75°C
Tj = 50°C
Reverse Voltage - V
R
(V)
Junction Capacitance - C
T
(pF)
0 50 100 150 200
10
100
t
1
, Rectangular Pulse Duration (Seconds)
Thermal Impedance Z
thJC
(°C/W)
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00
0.1
1
10
Single Pulse
(Thermal Resistance)
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.5
D = 02

VS-8CWH02FNTRHM3

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 2x4 Amp 200 Volt
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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