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VS-8CWH02FNTRHM3

P1-P3P4-P6P7-P7
VS-8CWH02FNHM3
www.vishay.com
Vishay Semiconductors
Revision: 02-Aug-12
4
Document Number: 94741
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
Average Forward Current - IF
(AV)
(A)
Allowable Case Temperature (°C)
0 1 2 3 4 5 6
150
155
160
165
170
175
180
DC
see note (1)
Square wave (D=0.50)
rated Vr applied
Average Power Loss ( Watts )
Average Forward Current - I
F
(AV)
(A)
0123456
0
1
2
3
4
5
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
RMS Limit
DC
trr ( nC )
di
F
/dt (A/μs )
0001001
0
5
10
15
20
25
30
35
40
4A, Tj = 25°C
4A, Tj = 125°C
Qrr ( nC )
di
F
/dt (A/μs )
0001001
0
10
20
30
40
50
60
70
4A, Tj = 25°C
4A, Tj = 125°C
VS-8CWH02FNHM3
www.vishay.com
Vishay Semiconductors
Revision: 02-Aug-12
5
Document Number: 94741
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Reverse Recovery Parameter Test Circuit
Fig. 10 - Reverse Recovery Waveform and Definitions
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dI
F
/dt
adjust
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dI
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve dened by t
rr
and I
RRM
t
rr
x I
RRM
2
Q
rr
=
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
VS-8CWH02FNHM3
www.vishay.com
Vishay Semiconductors
Revision: 02-Aug-12
6
Document Number: 94741
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-8CWH02FNHM3 75 3000 Antistatic plastic tube
VS-8CWH02FNTRHM3 2000 2000 13" diameter reel
VS-8CWH02FNTRRHM3 3000 3000 13" diameter reel
VS-8CWH02FNTRLHM3 3000 3000 13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95519
Part marking information www.vishay.com/doc?95518
Packaging information www.vishay.com/doc?95033
2 - Current rating (8 = 8 A)
4
- Package identifier:
W = D-PAK
C = Common cathode
5
- H = Hyperfast recovery
6
- Voltage rating (02 = 200 V)
7
- FN = TO-252AA
8
-
TR = Tape and reel
None = Tube
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
3 - Circuit configuration:
1 - Vishay Semiconductors product
Device code
51 32 4 6 7 8 9
VS- 8 C W H 02 FN TRL H M3
10
- Environmental digit:
M3 = Halogen-free, RoHS-compliant, and terminations lead (Pb)-free
10
9
- H = AEC-Q101 qualified
P1-P3P4-P6P7-P7

VS-8CWH02FNTRHM3

Mfr. #:
Buy VS-8CWH02FNTRHM3
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 2x4 Amp 200 Volt
Lifecycle:
New from this manufacturer.
Delivery:
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