PESDXL2BT_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 25 August 2009 3 of 14
NXP Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
5. Limiting values
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1 to 3 or 2 to 3.
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1 to 3 or 2 to 3.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
P
PP
peak pulse power t
p
= 8/20 µs
[1][2]
PESD3V3L2BT - 350 W
PESD5V0L2BT - 350 W
PESD12VL2BT - 200 W
PESD15VL2BT - 200 W
PESD24VL2BT - 200 W
I
PP
peak pulse current t
p
= 8/20 µs
[1][2]
PESD3V3L2BT - 15 A
PESD5V0L2BT - 13 A
PESD12VL2BT - 5 A
PESD15VL2BT - 5 A
PESD24VL2BT - 3 A
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
Table 6. ESD maximum ratings
Symbol Parameter Conditions Min Max Unit
V
ESD
electrostatic discharge
voltage
IEC 61000-4-2
(contact discharge)
[1][2]
PESD3V3L2BT - 30 kV
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT - 23 kV
PESDxL2BT series HBM MIL-STD883 - 10 kV
Table 7. ESD standards compliance
ESD Standard Conditions
IEC 61000-4-2, level 4 (ESD) > 15 kV (air); > 8 kV (contact)
HBM MIL-STD883, class 3 > 4 kV
