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PESD3V3L2BT,215

P1-P3P4-P6P7-P9P10-P12P13-P15
PESDXL2BT_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 25 August 2009 6 of 14
NXP Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1 to 3 or 2 to 3.
r
dif
differential resistance I
R
=1mA
PESD3V3L2BT - - 400 Ω
PESD5V0L2BT - - 80 Ω
PESD12VL2BT - - 200 Ω
PESD15VL2BT - - 225 Ω
PESD24VL2BT - - 300 Ω
Table 8. Characteristics
…continued
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
PESDXL2BT_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 25 August 2009 7 of 14
NXP Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
T
amb
=25°C
(1) PESD3V3L2BT and PESD5V0L2BT
(2) PESD12VL2BT, PESD15VL2BT, PESD24VL2BT
Fig 3. Peak pulse power as a function of exponential
pulse duration t
p
; typical values
Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical
values
T
amb
=25°C; f = 1 MHz
(1) PESD3V3L2BT
(2) PESD5V0L2BT
T
amb
=25°C; f = 1 MHz
(1) PESD12VL2BT
(2) PESD15VL2BT
(3) PESD24VL2BT
Fig 5. Diode capacitance as a function of reverse
voltage; typical values
Fig 6. Diode capacitance as a function of reverse
voltage; typical values
006aaa531
10
3
10
2
10
4
P
PP
(W)
10
t
p
(µs)
110
4
10
3
10 10
2
(1)
(2)
T
j
(°C)
0 20015050 100
001aaa193
0.4
0.8
1.2
P
PP
0
P
PP(25°C)
V
R
(V)
054231
006aaa067
70
90
100
110
C
d
(pF)
50
60
80
(1)
(2)
V
R
(V)
0252010 155
006aaa068
8
12
4
16
20
C
d
(pF)
0
(1)
(2)
(3)
PESDXL2BT_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 25 August 2009 8 of 14
NXP Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
(1) PESD3V3L2BT, PESD5V0L2BT
PESD12VL2BT, PESD15VL2BT and PESD24VL2BT:
I
RM
< 20 nA; T
j
= 150 °C
Fig 7. Relative variation of reverse leakage current
as a function of junction temperature; typical
values
Fig 8. V-I characteristics for a bidirectional ESD
protection diode
006aaa069
1
10
10
−1
T
j
(°C)
−100 150100050−50
I
RM
I
RM(25°C)
(1)
006aaa676
−V
CL
−V
BR
−V
RWM
V
CL
V
BR
V
RWM
−I
RM
I
RM
−I
R
I
R
−I
PP
I
PP
−
+
P1-P3P4-P6P7-P9P10-P12P13-P15

PESD3V3L2BT,215

Mfr. #:
Buy PESD3V3L2BT,215
Manufacturer:
Nexperia
Description:
TVS Diodes / ESD Suppressors 3.3V BIDIRECTION ESD DUAL
Lifecycle:
New from this manufacturer.
Delivery:
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