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HEF40106BT-Q100J

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
HEF40106B_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 7 August 2012 3 of 15
NXP Semiconductors
HEF40106B-Q100
Hex inverting Schmitt trigger
6.2 Pin description
7. Functional description
[1] H = HIGH voltage level; L = LOW voltage level.
8. Limiting values
[1] For SO14 packages: above T
amb
= 70 C, P
tot
derates linearly with 8 mW/K.
[2] For TSSOP14 packages: above T
amb
= 60 C, P
tot
derates linearly with 5.5 mW/K.
Table 2. Pin description
Symbol Pin Description
1A to 6A 1, 3, 5, 9, 11, 13 input
1Y to 6Y 2, 4, 6, 8, 10, 12 output
V
DD
14 supply voltage
V
SS
7 ground (0 V)
Table 3. Function table
[1]
Input Output
nA nY
LH
HL
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to V
SS
= 0 V (ground).
Symbol Parameter Conditions Min Max Unit
V
DD
supply voltage 0.5 +18 V
I
IK
input clamping current V
I
< 0.5 V or V
I
>V
DD
+ 0.5 V - 10 mA
V
I
input voltage 0.5 V
DD
+ 0.5 V
I
OK
output clamping current V
O
< 0.5 V or V
O
>V
DD
+ 0.5 V - 10 mA
I
I/O
input/output current - 10 mA
I
DD
supply current - 50 mA
T
stg
storage temperature 65 +150 C
T
amb
ambient temperature 40 +125 C
P
tot
total power dissipation T
amb
= 40 C to +125 C
SO14
[1]
-500mW
TSSOP14
[2]
-500mW
P power dissipation per output - 100 mW
HEF40106B_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 7 August 2012 4 of 15
NXP Semiconductors
HEF40106B-Q100
Hex inverting Schmitt trigger
9. Recommended operating conditions
10. Static characteristics
Table 5. Recommended operating conditions
Symbol Parameter Conditions Min Max Unit
V
DD
supply voltage 3 15 V
V
I
input voltage 0 V
DD
V
T
amb
ambient temperature in free air 40 +125 C
Table 6. Static characteristics
V
SS
= 0 V; V
I
=V
SS
or V
DD
; unless otherwise specified.
Symbol Parameter Conditions V
DD
T
amb
= 40 C T
amb
= +25 C T
amb
= +85 C T
amb
= +125 C Unit
Min Max Min Max Min Max Min Max
V
OH
HIGH-level
output voltage
I
O
< 1 A 5 V 4.95 - 4.95 - 4.95 - 4.95 - V
10 V 9.95 - 9.95 - 9.95 - 9.95 - V
15 V 14.95 - 14.95 - 14.95 - 14.95 - V
V
OL
LOW-level
output voltage
I
O
< 1 A 5 V - 0.05 - 0.05 - 0.05 - 0.05 V
10 V - 0.05 - 0.05 - 0.05 - 0.05 V
15 V - 0.05 - 0.05 - 0.05 - 0.05 V
I
OH
HIGH-level
output current
V
O
= 2.5 V 5 V - 1.7 - 1.4 - 1.1 - 1.1 mA
V
O
= 4.6 V 5 V - 0.64 - 0.5 - 0.36 - 0.36 mA
V
O
= 9.5 V 10 V - 1.6 - 1.3 - 0.9 - 0.9 mA
V
O
= 13.5 V 15 V - 4.2 - 3.4 - 2.4 - 2.4 mA
I
OL
LOW-level
output current
V
O
= 0.4 V 5 V 0.64 - 0.5 - 0.36 - 0.36 - mA
V
O
= 0.5 V 10 V 1.6 - 1.3 - 0.9 - 0.9 - mA
V
O
= 1.5 V 15 V 4.2 - 3.4 - 2.4 - 2.4 - mA
I
I
input leakage
current
15 V - 0.1 - 0.1 - 1.0 - 1.0 A
I
DD
supply current all valid input
combinations;
I
O
=0A
5 V - 0.25 - 0.25 - 7.5 - 7.5 A
10 V - 0.5 - 0.5 - 15.0 - 15.0 A
15 V - 1.0 - 1.0 - 30.0 - 30.0 A
C
I
input
capacitance
---7.5-- - -pF
HEF40106B_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 7 August 2012 5 of 15
NXP Semiconductors
HEF40106B-Q100
Hex inverting Schmitt trigger
11. Dynamic characteristics
[1] Typical value of the propagation delay and output transition time can be calculated with the extrapolation formula (C
L
in pF).
Table 7. Dynamic characteristics
T
amb
= 25 C; C
L
= 50 pF; t
r
= t
f
20 ns; wave forms see Figure 4; test circuit see Figure 5; unless otherwise specified.
Symbol Parameter Conditions V
DD
Extrapolation formula
[1]
Min Typ Max Unit
t
PHL
HIGH to LOW
propagation delay
nA or nB to nY 5 V 63 ns + (0.55 ns/pF)C
L
- 90 180 ns
10 V 29 ns + (0.23 ns/pF)C
L
-3570ns
15 V 22 ns + (0.16 ns/pF)C
L
-3060ns
t
PLH
LOW to HIGH
propagation delay
nA or nB to nY 5 V 58 ns + (0.55 ns/pF)C
L
- 75 150 ns
10 V 29 ns + (0.23 ns/pF)C
L
-3570ns
15 V 22 ns + (0.16 ns/pF)C
L
-3060ns
t
THL
HIGH to LOW output
transition time
nY to LOW 5 V 10 ns + (1.00 ns/pF)C
L
- 60 120 ns
10 V 9 ns + (0.42 ns/pF)C
L
-3060ns
15 V 6 ns + (0.28 ns/pF)C
L
-2040ns
t
TLH
LOW to HIGH output
transition time
nA or nB to
HIGH
5 V 10 ns + (1.00 ns/pF)C
L
- 60 120 ns
10 V 9 ns + (0.42 ns/pF)C
L
-3060ns
15 V 6 ns + (0.28 ns/pF)C
L
-2040ns
Table 8. Dynamic power dissipation
V
SS
= 0 V; t
r
= t
f
20 ns; T
amb
= 25 C.
Symbol Parameter V
DD
Typical formula where:
P
D
dynamic power
dissipation
5V P
D
= 2300 f
i
+ (f
o
C
L
) V
DD
2
(W) f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
(f
o
C
L
) = sum of the outputs;
V
DD
= supply voltage in V.
10 V P
D
= 9000 f
i
+ (f
o
C
L
) V
DD
2
(W)
15 V P
D
= 20000 f
i
+ (f
o
C
L
) V
DD
2
(W)
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

HEF40106BT-Q100J

Mfr. #:
Buy HEF40106BT-Q100J
Manufacturer:
Nexperia
Description:
Inverters HEF40106BT-Q100/SO14/REEL 13
Lifecycle:
New from this manufacturer.
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