HEF40106B_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 7 August 2012 6 of 15
NXP Semiconductors
HEF40106B-Q100
Hex inverting Schmitt trigger
12. Waveforms
Measurement points are given in Table 9.
Logic levels: V
OL
and V
OH
are typical output voltage levels that occur with the output load.
t
r
, t
f
= input rise and fall times.
Fig 4. Propagation delay and output transition time
001aag197
input
output
t
PLH
t
PHL
0 V
V
I
V
M
V
M
V
OH
V
OL
t
TLH
t
THL
90 %
10 %
10 %
90 %
t
r
t
f
Table 9. Measurement points
Supply voltage Input Output
V
DD
V
M
V
M
5 V to 15 V 0.5V
DD
0.5V
DD
Test data given in Table 10.
Definitions for test circuit:
DUT = Device Under Test.
C
L
= load capacitance including jig and probe capacitance.
R
T
= termination resistance should be equal to the output impedance Z
o
of the pulse generator.
Fig 5. Test circuit
V
DD
V
I
V
O
001aag182
DUT
C
L
R
T
G
Table 10. Test data
Supply voltage Input Load
V
DD
V
I
t
r
, t
f
C
L
5 V to 15 V V
SS
or V
DD
20 ns 50 pF
HEF40106B_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 7 August 2012 7 of 15
NXP Semiconductors
HEF40106B-Q100
Hex inverting Schmitt trigger
13. Transfer characteristics
[1] All typical values are at T
amb
=25C.
Table 11. Transfer characteristics
V
SS
=0V; see Figure 6 and Figure 7.
Symbol Parameter Conditions V
DD
T
amb
= 40 C to +85 C T
amb
= 40 C
to +125 C
Unit
Min Typ
[1]
Max Min Max
V
T+
positive-going threshold voltage 5 V 2.0 3.0 3.5 2.0 3.5 V
10 V 3.7 5.8 7.0 3.7 7.0 V
15 V 4.9 8.3 11.0 4.9 11.0 V
V
T
negative-going threshold voltage 5 V 1.5 2.2 3.0 1.5 3.0 V
10 V 3.0 4.5 6.3 3.0 6.3 V
15 V 4.0 6.5 10.1 4.0 10.1 V
V
H
hysteresis voltage 5 V 0.5 0.8 - 0.5 - V
10 V 0.7 1.3 - 0.7 - V
15 V 0.9 1.8 - 0.9 - V
Fig 6. Transfer characteristic Fig 7. Waveforms showing definition of V
T+
and V
T
(between limits at 30 % and 70 %) and V
H
001aag107
V
O
V
I
V
H
V
T+
V
T
001aag108
V
O
V
I
V
H
V
T+
V
T
HEF40106B_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 7 August 2012 8 of 15
NXP Semiconductors
HEF40106B-Q100
Hex inverting Schmitt trigger
a. V
DD
= 5 V; T
amb
= 25 Cb.V
DD
= 10 V; T
amb
= 25 C
c. V
DD
= 15 V; T
amb
= 25 C
Fig 8. Typical drain current as a function of input
V
I
(V)
054231
001aal181
40
60
20
80
100
I
D
(μA)
0
V
I
(V)
0108462
001aal182
400
600
200
800
1000
I
D
(μA)
0
V
I
(V)
020168124
001aal183
800
1200
400
1600
2000
I
D
(μA)
0

HEF40106BT-Q100J

Mfr. #:
Manufacturer:
Nexperia
Description:
Inverters HEF40106BT-Q100/SO14/REEL 13
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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