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SI5403DC-T1-GE3

P1-P3P4-P6P7-P9P10-P11
www.vishay.com
4
Document Number: 68643
S-81443-Rev. A, 23-Jun-08
Vishay Siliconix
Si5403DC
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Forward Diode Voltage vs. Temp.
Threshold Voltage
0.1
1
10
100
0.0 0.3 0.6 0.9 1.2
T
J
= 150 °C
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
= 25 °C
1.2
1.4
1.6
1.8
2.0
2.2
2.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.00
0.01
0.02
0.03
0.04
0.05
048 12 16 20
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
T
J
=25 °C
T
J
= 125 °C
I
D
=7.2A
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100
Time (s)
Power (W)
Safe Operating Area, Junction-to-Ambient
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
100
1
0.1 1 10 100
0.01
10
- Drain Current (A)I
D
0.1
T
A
=25 °C
Single Pulse
1ms
10 ms
1s
10 s
DC
Limited byR
DS(on)
*
BVDSS
Limited
100 µs
100 ms
Document Number: 68643
S-81443-Rev. A, 23-Jun-08
www.vishay.com
5
Vishay Siliconix
Si5403DC
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
2
4
6
8
10
12
14
0 255075100125150
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Package Limited
Power, Junction-to-Case
0
2
4
6
8
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
Power, Junction-to-Ambient
0.0
0.4
0.8
1.2
1.6
0 25 50 75 100 125 150
T
A
-Ambient Temperature (°C)
Power (W)
www.vishay.com
6
Document Number: 68643
S-81443-Rev. A, 23-Jun-08
Vishay Siliconix
Si5403DC
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68643.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1
10
100010
-1
10
-4
100
0.2
0.1
0.05
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.1
0.01
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 80°C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
0.02
1
Normalized Thermal Transient Impedance, Junction-to-Foot
1
0.1
0.01
0.2
Duty Cycle = 0.5
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
10
-3
10
-2
110
-1
10
-4
0.05
0.02
Single Pulse
0.1
P1-P3P4-P6P7-P9P10-P11

SI5403DC-T1-GE3

Mfr. #:
Buy SI5403DC-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -30V Vds 20V Vgs 1206-8 ChipFET
Lifecycle:
New from this manufacturer.
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