FDP5690 Datasheet FDB5690, FDP5690 | P1-P3

FDP5690/FDB5690

FDP5690/FDB5690 Rev. C

July 2000

2000 Fairchild Semiconductor International

FDP5690/FDB5690

60V N-Channel PowerTrench

TM

MOSFET

Features

• 32 A, 60 V. R

DS(ON)

= 0.027 Ω @ V

GS

= 10 V

R

DS(ON)

= 0.032 Ω @ V

GS

= 6 V.

• Critical DC electrical parameters specified at evevated

temperature.

• Rugged internal source-drain diode can eliminate the

need for an external Zener diode transient suppressor.

• High performance trench technology for extremely low

R

DS(ON)

.

• 175°C maximum junction temperature rating.

Absolute Maximum Ratings T

C

= 25°C unless otherwise noted

Symbol Parameter

FDP5690 FDB5690

Units

V

DSS

Drain-Source Voltage 60 V

V

GSS

Gate-Source Voltage

±

20

V

I

D

Maximum Drain Current - Continuous 32 A

- Pulsed 100

Total Power Dissipation @ T

C

= 25

°

C

58 W

P

D

Derate above 25

°

C

0.4

W/

°

C

T

J

, T

STG

Operating and Storage Junction Temperature Range -65 to +175

°

C

Thermal Characteristics

R

θ

JC

Thermal Resistance, Junction-to-Case 2.6

°

C/W

R

θ

JA

Thermal Resistance, Junction-to-Ambient 62.5

°

C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

FDB5690 FDB5690 13’’ 24mm 800

FDP5690 FDP5690 Tube N/A 45

S

D

G

S

G

D

TO-220

FDP Series

D

G

S

TO-263AB

FDB Series

General Description

This N-Channel MOSFET has been designed specifically

to improve the overall efficiency of DC/DC converters

using either synchronous or conventional switching PWM

controllers.

These MOSFETs feature faster switching and lower gate

charge than other MOSFETs with comparable R

DS(on)

specifications resulting in DC/DC power supply designs

with higher overall efficiency.

FDP5690/FDB5690

FDP5690/FDB5690 Rev. C

Electrical Characteristics

T

c

= 25°C unless otherwise noted

S

y

mbol Parameter Test Conditions Min T

yp

Max Units

Drain-Source Avalanche Ratings

(Note1)

W

DSS

Single Pulse Drain-Source

Avalanche Energy

V

DD

= 30 V, I

D

= 32A 80 mJ

I

AR

Maximum Drain-Source Avalanche Current 32 A

Off Characteristics

BV

DSS

Drain-Source Breakdown Volta

g

e

V

GS

= 0 V, I

D

= 250

µ

A

60

V

∆

BV

DSS

∆

T

J

Breakdown Voltage Temperature

Coefficient

I

D

= 250

µ

A, Referenced to 25

°

C61mV/

°

C

I

DSS

Zero Gate Voltage Drain Current V

DS

= 48 V, V

GS

= 0 V 1

µ

A

I

GSSF

Gate-Body Leakage Current,

Forward

V

GS

= 20 V, V

DS

= 0 V 100

nA

I

GSSR

Gate-Body Leakage Current,

Reverse

V

GS

= -20 V, V

DS

= 0 V -100

nA

On Characteristics

(Note 1)

V

GS(th)

Gate Threshold Voltage

V

DS

= V

GS

, I

D

= 250

µ

A

22.4 4 V

∆

V

GS(th)

∆

T

J

Gate Threshold Voltage

Temperature Coefficient

I

D

= 250

µ

A, Referenced to 25

°

C

-6.4

mV/

°

C

R

DS(on)

Static Drain-Source

On-Resistance

V

GS

= 10 V, I

D

= 16 A,

V

GS

= 10 V, I

D

= 16 A,T

J

= 125

°

C

V

GS

= 6 V, I

D

= 15 A

0.021

0.042

0.024

0.027

0.055

0.032

Ω

I

D(on)

On-State Drain Current V

GS

= 10 V, V

DS

= 5 V 50 A

g

FS

Forward Transconductance V

DS

= 5 V, I

D

= 16 A 32 S

Dynamic Characteristics

C

iss

Input Capacitance 1120 pF

C

oss

Output Capacitance 160 pF

C

rss

Reverse Transfer Capacitance

V

DS

= 25 V, V

GS

= 0 V,

f = 1.0 MHz

80 pF

Switching Characteristics

(Note 1)

t

d(on)

Turn-On Delay Time 10 18 ns

t

r

Turn-On Rise Time 9 18 ns

t

d(off)

Turn-Off Delay Time 24 39 ns

t

f

Turn-Off Fall Time

V

DD

= 30 V, I

D

= 1 A,

V

GS

= 10 V, R

GEN

= 6

Ω

10 18 ns

Q

g

Total Gate Charge 23 33 nC

Q

gs

Gate-Source Charge 3.9 nC

Q

gd

Gate-Drain Charge

V

DS

= 15 V,

I

D

= 16 A, V

GS

= 10 V

6.8 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

Maximum Continuous Drain-Source Diode Forward Current

(

Note 1

)

32 A

V

SD

Drain-Source Diode Forward

Voltage

V

GS

= 0 V, I

S

= 16 A

(Note 1)

0.92 1.2 V

Note:

1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

FDP5690/FDB5690

FDP5690/FDB5690 Rev. C

Typical Characteristics

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

Figure 3. On-Resistance Variation

with Temperature.

Figure 4. On-Resistance Variation

with Gate-to-Source Voltage.

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage

Variation with Source Current

and Temperature.

0

10

20

30

40

50

60

70

80

0246810

V

DS

, DRAIN-SOURCE VOLTAGE (V)

I

D

, DRAIN-SOURCE CURRENT (A)

V

GS

= 10V

4.0V

5.0V

4.5V

6.0V

7.0V

0

0.01

0.02

0.03

0.04

0.05

0.06

345678910

V

GS

, GATE TO SOURCE VOLTAGE (V)

R

DS(ON)

, ON-RESISTANCE (OHM)

I

D

= 16A

T

A

= 125

o

C

T

A

= 25

o

C

0

10

20

30

40

50

60

23456

V

GS

, GATE TO SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

T

A

= -55

o

C

25

o

C

125

o

C

V

DS

= 5V

0.0001

0.001

0.01

0.1

1

10

100

0 0.2 0.4 0.6 0.8 1 1.2 1.4

V

SD

, BODY DIODE FORWARD VOLTAGE (V)

I

S

, REVERSE DRAIN CURRENT (A)

T

A

= 125

o

C

25

o

C

-55

o

C

V

GS

= 0V

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

-50 -25 0 25 50 75 100 125 150 175

T

J

, JUNCTION TEMPERATURE (

o

C)

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

I

D

= 16A

V

GS

= 10V

0.8

1

1.2

1.4

1.6

1.8

2

2.2

0 20406080

I

D

, DRAIN CURRENT (A)

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

V

GS

= 4.0V

10V

5.0V

4.5V

6.0V

7.0V

FDP5690

FDP5690

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