MP6914 –IDEAL DIODE FOR SOLAR PANEL BYPASS AND GENERAL OR-ING CIRCUITS
MP6914 Rev. 1.01 www.MonolithicPower.com 2
5/28/2015 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2015 MPS. All Rights Reserved.
ORDERING INFORMATION
Part Number* Package Top Marking
MP6914DN SOIC8E MP6914
* For Tape & Reel, add suffix –Z (e.g. MP6914DN–Z);
For RoHS, compliant packaging, add suffix –LF (e.g. MP6914DN–LF–Z).
PACKAGE REFERENCE
ABSOLUTE MAXIMUM RATINGS
(1)
Cathode to Anode.........................-0.8V to +30V
Continuous Power Dissipation (T
A
= +25°C)
(2)
................................................................... 2.5W
Junction Temperature...............................150C
Lead Temperature (Solder).......................260C
Storage Temperature............... -55°C to +150C
Recommended Operation Conditions
(3)
V
DD
to Anode.......................................6V to 24V
Operating Junction Temp. (T
J
). -40°C to +125°C
Thermal Resistance
(4)
θ
JA
θ
JC
SOIC8E...................................50 ...... 10 ... C/W
Notes:
1) Exceeding these ratings may damage the device.
2) The maximum allowable power dissipation is a function of the
maximum junction temperature T
J
(MAX), the junction-to-
ambient thermal resistance θ
JA
, and the ambient temperature
T
A
. The maximum allowable continuous power dissipation at
any ambient temperature is calculated b
D(MAX)=(T
J
(MAX)-T
A
)/θ
JA
. Exceeding the maximum
allowable power dissipation will cause excessive die
temperature, and the regulator will go into thermal shutdown.
Internal thermal shutdown circuitry protects the device from
permanent damage.
3) The device is not guaranteed to function outside of its
operating conditions.
4) Measured on JESD51-7, 4-layer PCB.
