HEXFET
®
Power MOSFET
PD - 95477
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
7/16/04
SO-8
V
DSS
= -30V
R
DS(on)
= 0.25Ω
IRF9953PbF
Description
Recommended upgrade: IRF7306 or IRF7316
Lower profile/smaller equivalent: IRF7506
Symbol Maximum Units
Drain-Source Voltage V
DS
-30
Gate-Source Voltage V
GS
± 20
T
A
= 25°C -2.3
T
A
= 70°C -1.8
Pulsed Drain Current I
DM
-10
Continuous Source Current (Diode Conduction) I
S
1.6
T
A
= 25°C 2.0
T
A
= 70°C 1.3
Single Pulse Avalanche Energy E
AS
57 mJ
Avalanche Current I
AR
-1.3 A
Repetitive Avalanche Energy E
AR
0.20 mJ
Peak Diode Recovery dv/dt dv/dt -5.0 V/ ns
Junction and Storage Temperature Range T
J,
T
STG
-55 to + 150 °C
Thermal Resistance Ratings
Parameter Symbol Limit Units
Maximum Junction-to-Ambient R
θJA
62.5
°C/W
Absolute Maximum Ratings ( T
A
= 25°C Unless Otherwise Noted)
Continuous Drain Current
Maximum Power Dissipation
A
I
D
P
D
V
W
D1
D1
D
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
l Generation V Technology
l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Surface Mount
l Very Low Gate Charge and
Switching Losses
l Fully Avalanche Rated
l Lead-Free
