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IRF9953PBF

P1-P3P4-P6P7-P7
IRF9953PbF
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
Fig 5. Normalized On-Resistance
Vs. Temperature
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-10V
-1.0A
0.0
0.5
1.0
1.5
2.0
2.5
0.0 1.0 2.0 3.0 4.0 5.0
A
-I , Drain Current (A)
D
V = -10V
V = -4.5V
GS
GS
R
DS(on)
, Drain-to-Source On Resistance ( Ω )
0.00
0.20
0.40
0.60
0.80
0 3 6 9 12 15
GS
I = -2.3A
D
-V , Gate-to-Source Voltage (V)
R
DS(on)
, Drain-to-Source On Resistance ( Ω )
25 50 75 100 125 150
0
30
60
90
120
150
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
I
D
TOP
BOTTOM
-0.58A
-1.0A
-1.3A
IRF9953PbF
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
0
100
200
300
400
1 10 100
C, Capacitance (pF)
A
DS
-V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0 2 4 6 8 10
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D
-2.3A
V =-10V
DS
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF9953PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 B ASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX
MILLIMETERSINCHES
MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BAS IC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L
8X c
y
0.25 [.010]
CAB
e1
A
A1
8X b
C
0.10 [.004]
4312
F OOT P RI NT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OU T L I NE CONF OR MS T O JE DE C OU T LI NE MS -012 AA.
NOT E S :
1. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994.
2. CONTROLLING DIMENS ION: MILLIME TE R
3. DI ME N S IONS ARE S H OWN IN MIL L I ME T E R S [I NCH E S ] .
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RU SIONS .
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RU SIONS .
MOLD PROT RUSIONS NOT T O EXCEE D 0.25 [.010].
7 DIMENS ION IS T HE LENGTH OF L EAD FOR SOLDER ING T O
A S UBS T RATE .
MOLD PROT RUSIONS NOT T O EXCEE D 0.15 [.006].
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
DAT E CODE (YWW)
XXXX
INT ERNAT IONAL
RECT IFIER
LOGO
F 7101
Y = LAS T DIGIT OF T HE YE AR
PART NUMBER
LOT CODE
WW = WE E K
EXAMPLE: T HIS IS AN IRF 7101 (MOS FE T )
P = DE S I GNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
A = AS S E MB L Y S I T E CODE
P1-P3P4-P6P7-P7

IRF9953PBF

Mfr. #:
Buy IRF9953PBF
Manufacturer:
Infineon / IR
Description:
MOSFET DUAL -30V P-CH 20V VGS MAX
Lifecycle:
New from this manufacturer.
Delivery:
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