IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA76N25T IXTH76N25T
IXTI76N25T IXTP76N25T IXTQ76N25T
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
g
fs
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1 43 72 S
C
iss
4500 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 480 pF
C
rss
46 pF
t
d(on)
22 ns
t
r
25 ns
t
d(off)
56 ns
t
f
29 ns
Q
g(on)
92 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 25A 28 nC
Q
gd
21 nC
R
thJC
0.27 °C /W
R
thCH
TO-220 0.50 °C W
TO-3P, TO-247 0.21 °C W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
I
S
V
GS
= 0V 76 A
I
SM
Repetitive, pulse width limited by T
JM
200 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.5 V
t
rr
148 ns
I
RM
21
A
Q
RM
1.6 μC
Notes: 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
*: Current may be limited by external lead limit.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Resistive Switching Times
V
GS
= 15V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 3.3Ω (External)
I
F
= 38A, -di/dt = 250A/μs
V
R
= 100V, V
GS
= 0V
