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IXTH76N25T

P1-P3P4-P6
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA76N25T IXTH76N25T
IXTI76N25T IXTP76N25T IXTQ76N25T
Fig. 1. Output Characteristics
@ 25ºC
0
10
20
30
40
50
60
70
80
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
6V
5V
7V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
20
40
60
80
100
120
140
160
180
0 2 4 6 8 101214161820
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
5V
6V
7V
Fig. 3. Output Characteristics
@ 125ºC
0
10
20
30
40
50
60
70
80
01234567
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
5V
Fig. 4. R
DS(on)
Normalized to I
D
= 38A Value
vs. Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 76A
I
D
= 38A
Fig. 5. R
DS(on)
Normalized to I
D
= 38A Value
vs. Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
0 20 40 60 80 100 120 140 160 180
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Drain Current vs. Case Temperature
0
10
20
30
40
50
60
70
80
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
© 2007 IXYS CORPORATION, All rights reserved
IXTA76N25T IXTH76N25T
IXTI76N25T IXTP76N25T IXTQ76N25T
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
110
120
0 20 40 60 80 100 120 140 160 180
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
20
40
60
80
100
120
140
160
180
200
0.40.50.60.70.80.91.01.11.2
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 102030405060708090100
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 125V
I
D
= 25A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Maximum Transient Thermal
Impedance
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA76N25T IXTH76N25T
IXTI76N25T IXTP76N25T IXTQ76N25T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
8
10
12
14
16
18
20
22
24
26
28
30
32
34
15 20 25 30 35 40 45 50 55 60 65 70 75 80
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 3.3
Ω
V
GS
= 15V
V
DS
= 125V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
10
12
14
16
18
20
22
24
26
28
30
3 4 5 6 7 8 9 10 11 12 13 14 15
R
G
- Ohms
t
r
- Nanoseconds
20
21
22
23
24
25
t
d ( o n )
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 15V
V
DS
= 125V
I
D
= 76A
I
D
= 38A
I
D
=
38A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
16
18
20
22
24
26
28
30
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
44
47
50
53
56
59
62
65
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3.3
Ω
, V
GS
= 15V
V
DS
= 125V
I
D
= 38A
I
D
= 76A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
12
14
16
18
20
22
24
26
28
30
15 20 25 30 35 40 45 50 55 60 65 70 75 80
I
D
- Amperes
t
f
- Nanoseconds
43
46
49
52
55
58
61
64
67
70
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3.3
Ω
, V
GS
= 15V
V
DS
= 125V
T
J
= 125ºC
T
J
= 25ºC
T
J
= 125ºC
T
J
= 25ºC
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
10
20
30
40
50
60
70
80
3 4 5 6 7 8 9 10 11 12 13 14 15
R
G
- Ohms
t
f
- Nanoseconds
50
70
90
110
130
150
170
190
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 15V
V
DS
= 125V
I
D
= 38A, 76A
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
10
12
14
16
18
20
22
24
26
28
30
32
34
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 3.3
Ω
V
GS
= 15V
V
DS
= 125V
I
D
= 38A
I
D
= 76A
IXYS REF: T_76N25T(6E)06-28-06
P1-P3P4-P6

IXTH76N25T

Mfr. #:
Buy IXTH76N25T
Manufacturer:
Littelfuse
Description:
MOSFET 76 Amps 250V 39 Rds
Lifecycle:
New from this manufacturer.
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