2003 Jun 05 10
Philips Semiconductors Product specification
30 Mbits/s up to 1.25 Gbits/s laser drivers TZA3047A; TZA3047B
10 DC CHARACTERISTICS
T
amb
= 40 to +85 °C; R
th(j-a)
= 35 K/W; P
tot
= 400 mW; V
CCA
= 3.14 to 3.47 V; V
CCD
= 3.14 to 3.47 V;
V
CCO
= 3.14 to 3.47 V; R
AVR
= 7.5 k;R
ER
=62k;R
MODIN
= 6.2 k;R
BIASIN
= 6.8 k;R
PWA
=10k;R
RREF
=10k;
R
MAXMON
=13k; R
MAXOP
=20k; positive currents flow into the IC; all voltages are referenced to ground; unless
otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supplies: pins V
CCA
,V
CCD
and V
CCO
V
CCA
analog supply voltage 3.14 3.3 3.47 V
V
CCD
digital supply voltage 3.14 3.3 3.47 V
V
CCO
RF output supply voltage 3.3 V laser supply 3.14 3.3 3.47 V
5 V laser supply 4.75 5.0 5.25 V
I
CCA
analog supply current 30 40 50 mA
I
CCD
digital supply current 35 45 55 mA
I
CCO
RF output supply current pins LA and LAQ open-circuit
3.3 V laser supply 8 15 25 mA
5 V laser supply 20 mA
P
core
core power dissipation core excluding output currents
I
o(LA)
,I
o(LAQ)
and I
BIAS
; PWA and
retiming off
264 mW
P
tot
total power dissipation V
BIAS
= 3.3 V; I
BIAS
= 20 mA;
I
mod
= 16 mA; note 1
330 400 500 mW
Data and clock inputs: pins DIN and CIN
V
i(p-p)
input voltage swing
(peak-to-peak value)
V
i(DIN)
=(V
CCD
2V)toV
CCD;
V
i(CIN)
=(V
CCD
2V)toV
CCD
100 1000 mV
V
int(cm)
internal common mode
voltage
AC-coupled inputs V
CCD
1.32 V
V
IO
input offset voltage note 2 10 0 +10 mV
Z
i(dif)
differential input
impedance
80 100 125
Z
i(cm)
common mode input
impedance
810 13k
V
i(CIN)(dis)
input voltage for disabled
retiming
V
CIN
=V
CINQ
−− 0.3 V
Monitor photodiode input: pin MON
V
i(MON)
input voltage I
MON
=50to2500µA 0.9 1.1 1.3 V
Z
i(MON)
input impedance I
MON
= 50 to 2500 µA 27 −Ω
Extinction ratio setting for dual-loop control: pins MON and ER
ER
min
low extinction ratio setting dual-loop set-up; I
ER
> 30 µA;
note 3
linear scale 57
dB scale 7 8.5 dB
2003 Jun 05 11
Philips Semiconductors Product specification
30 Mbits/s up to 1.25 Gbits/s laser drivers TZA3047A; TZA3047B
ER
max
high extinction ratio setting dual-loop set-up; I
ER
< 10 µA;
note 3
linear scale 13 15 −−
dB scale 11 11.8 dB
ER
acc
relative accuracy of ER temperature and V
CCA
variations; ER = 10;
AVR = 550 µA
10 +10 %
V
ref(ER)
reference voltage on
pin ER
I
ER
= 35 to 5 µA;
C
ER
< 100 pF
1.15 1.20 1.25 V
I
ER
current sink on pin ER 35 −−5µA
Average setting for dual-loop control and average loop control: pins MON and AVR
I
av(MON)(low)
low average monitor
current setting
I
AVR
> 280 µA
dual-loop (ER = 5) −− 150 µA
average loop (pin ER to GND) −− 150 µA
I
av(MON)(max)
maximumaverage monitor
current setting
I
AVR
= 15.0 µA
dual-loop (ER = 5) 1200 1300 −µA
average loop (pin ER to GND) 1200 1300 −µA
I
av(MON)
relative accuracy of
average current on
pin MON
temperature and V
CCA
variations; ER = 10;
AVR = 550 µA
10 +10 %
V
ref(AVR)
reference voltage on
pin AVR
I
AVR
= 250 to 15 µA;
C
AVR
< 100 pF
1.15 1.20 1.25 V
I
sink(AVR)
current sink on pin AVR 280 −−15 µA
Control loop modulation output: pin MODOUT
I
source(MODOUT)
source current V
MODOUT
= 0.5 to 1.5 V;
C
MODOUT
< 100 pF
−− 200 µA
I
sink(MODOUT)
sink current V
MODOUT
= 0.5 to 1.5 V;
C
MODOUT
< 100 pF
200 −−µA
Control loop bias output: pin BIASOUT
I
source(BIASOUT)
source current V
BIASOUT
= 0.5 to 1.5 V;
C
BIASOUT
< 100 pF
−− 200 µA
I
sink(BIASOUT)
sink current V
BIASOUT
= 0.5 to 1.5 V;
C
BIASOUT
< 100 pF
200 −−µA
Bias current source: pins BIASIN and BIAS
g
m(bias)
bias transconductance V
BIASIN
= 0.5 to 1.5 V
V
BIAS
=V
CCO
= 3.3 V 90 110 125 mA/V
V
BIAS
= 4.1 V; V
CCO
= 5.0 V 95 110 130 mA/V
I
source(BIASIN)
source current at
pin BIASIN
V
BIASIN
= 0.5 to 1.5 V 110 100 95 µA
I
BIAS(max)
maximum bias current V
BIASIN
= 1.8 V 100 −−mA
I
BIAS(min)
minimum bias current V
BIASIN
= 0 to 0.4 V 0.2 0.4 mA
I
BIAS(dis)
bias current at disable V
ENABLE
< 0.8 V −− 30 µA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
2003 Jun 05 12
Philips Semiconductors Product specification
30 Mbits/s up to 1.25 Gbits/s laser drivers TZA3047A; TZA3047B
V
BIAS
output voltage on pin BIAS normal operation
V
CCO
= 3.3 V 0.4 3.6 V
V
CCO
= 5 V 0.8 4.1 V
Modulation current source: pin MODIN
g
m(mod)
modulation
transconductance
V
MODIN
= 0.5 to 1.5 V
V
LA
=V
LAQ
=V
CCO
= 3.3 V 78 90 105 mA/V
V
LA
=V
LAQ
=V
CCO
= 4.5 V 80 95 110 mA/V
I
source(MODIN)
source current at
pin MODIN
V
MODIN
= 0.5 to 1.5 V 110 100 95 µA
Modulation current outputs: pins LA
I
o(LA)(max)(on)
maximum laser
modulation output current
at LA on
V
MODIN
= 1.8 V;
V
LA
=V
CCO
= 3.3 V; note 4
100 −−mA
I
o(LA)(min)(on)
minimum laser modulation
output current at LA on
V
MODIN
=0to0.4V;
V
LA
=V
CCO
= 3.3 V; note 4
56mA
I
o(LA)(min)(off)
minimum laser modulation
output current at LA off
V
LA
=V
CCO
= 3.3 V; note 4
V
MODIN
= 0.5 V −− 0.8 mA
V
MODIN
= 1.5 V −− 2mA
Z
o(LA)
, Z
o(LAQ)
output impedance pins LA
and LAQ
80 100 125
I
o(LA)(dis)
,
I
o(LAQ)(dis)
non-inverted and inverted
laser modulation output
current at disable
V
ENABLE
< 0.8 V −− 200 µA
V
o(LA)min
minimum output voltage at
pin LA
TZA3047A; V
CCO
= 3.3 V 1.6 −−V
TZA3047B; V
CCO
= 3.3 V 1.2 −−V
TZA3047B; V
CCO
= 5 V 1.6 −−V
Enable function: pin ENABLE
V
IL
LOW-level input voltage bias and modulation currents
disabled
−− 0.8 V
V
IH
HIGH-level input voltage bias and modulation currents
enabled
2.0 −−V
R
pu(int)
internal pull-up resistance 16 20 30 k
Alarm reset: pin ALRESET
V
IL
LOW-level input voltage no reset −− 0.8 V
V
IH
HIGH-level input voltage reset 2.0 −−V
R
pd(int)
internal pull-down
resistance
710 15k
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

TZA3047BVH/C1,551

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
IC LASER DRIVER 1.25GBPS 32-HBCC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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