2003 Jun 05 13
Philips Semiconductors Product specification
30 Mbits/s up to 1.25 Gbits/s laser drivers TZA3047A; TZA3047B
Notes
1. The total power dissipation P
tot
is calculated with V
BIAS
=V
CCO
= 3.3 V and I
BIAS
= 20 mA. In the application V
BIAS
will be V
CCO
minus the laser diode voltage which results in a lower total power dissipation.
2. The specification of the offset voltage is guaranteed by design.
3. Any (AVR, ER) setting needs to respect 50 µA<I
MON
< 2500 µA. Therefore, for large ER settings,
minimum/maximum AVR cannot be reached.
4. The relation between the sink current I
o(LA)
and the modulation current I
mod
is: where
Z
L(LA)
is the external load on pin LA. The voltage on pin MODIN programmes the modulation current I
mod
. This current
is divided between Z
L(LA)
and the 100 internal resistor connected to pins LA. When the modulation current is
programmed to 100 mA, a typical Z
L(LA)
of 25 will result in an I
o(LA)
current of 80 mA, while 20 mA flows via the
internal resistor. This corresponds to a voltage swing of 2 V on the real application load.
5. V
VTEMP
= 1.31 + TC
VTEMP
× T
j
and T
j
=T
amb
+P
tot
× R
th(j-a)
.
Alarm operating current: pins MAXOP and ALOP
V
ref(MAXOP)
reference voltage on
pin MAXOP
I
MAXOP
= 10 to 200 µA 1.15 1.2 1.25 V
N
MAXOP
ratio of I
oper(alarm)
and
I
MAXOP
I
oper(alarm)
= 7.5 to 150 mA
V
CCO
= 3.3 V 700 800 900
V
CCO
= 5.0 V 750 850 950
V
D(ALOP)L
drain voltage at active
alarm
I
ALOP
= 500 µA00.4 V
Alarm monitor current: pins MAXMON and ALMON
V
ref(MAXMON)
reference voltage on
pin MAXMON
I
MAXMON
=10to200µA 1.15 1.2 1.25 V
N
MAXMON
ratio of I
MON(alarm)
and
I
MAXMON
I
MON(alarm)
= 150 to 3000 µA1015 20
V
D(ALMON)L
drain voltage at active
alarm
I
ALMON
= 500 µA00.4 V
Reference block: pins RREF and VTEMP
V
RREF
reference voltage R
RREF
=10k (1%);
C
RREF
< 100 pF
1.15 1.20 1.25 V
V
VTEMP
temperature dependent
voltage
T
j
=25°C; C
VTEMP
< 2 nF;
note 5
1.15 1.20 1.25 V
TC
VTEMP
temperature coefficient of
V
VTEMP
T
j
= 25 to +125 °C; note 5 −−2.2 mV/K
I
source(VTEMP)
source current of
pin VTEMP
−− 1mA
I
sink(VTEMP)
sink current of pin VTEMP 1 −−mA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
l
o(LA)
I
mod
100
100 Z
LLA()
+
--------------------------------
×=
2003 Jun 05 14
Philips Semiconductors Product specification
30 Mbits/s up to 1.25 Gbits/s laser drivers TZA3047A; TZA3047B
11 AC CHARACTERISTICS
T
amb
= 40 to +85 °C; R
th(j-a)
= 35 K/W; P
tot
= 400 mW; V
CCA
= 3.14 to 3.47 V; V
CCD
= 3.14 to 3.47 V;
V
CCO
= 3.14 to 3.47 V; R
AVR
= 7.5 k;R
ER
=62k;R
MODIN
= 6.2 k;R
BIASIN
= 6.8 k;R
PWA
=10k;R
RREF
=10k;
R
MAXMON
=13k; R
MAXOP
=20k; positive currents flow into the IC; all voltages are referenced to ground; unless
otherwise specified.
Notes
1. The output jitter specification is guaranteed by design.
2. For high modulation current, t
r
and t
f
are impacted by total inductance between the LA pins and the laser connection.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
RF path
BR bit rate 0.03 1.25 Gbits/s
J
LA(p-p)
jitter of pin LA output signal
(peak-to-peak value)
R
L
=25; note 1 −−30 ps
t
r
rise time of voltage on pin LA 20% to 80%; R
L
=25;
note 2
120 150 ps
t
f
fall time of voltage on pin LA 80% to 20%; R
L
=25;
note 2
120 150 ps
t
su(D)
data input set-up time 60 −−ps
t
h(D)
data input hold time 60 −−ps
t
en(start)
start-up time at enable direct current setting −−1µs
Current control
tc
int
internal time constant dual-loop control
operating currents fully
settled
30 −−ms
Pulse width adjustment
t
PWA(min)
minimum pulse width
adjustment on pins LA
R
PWA
= 6.7 k;
C
PWA
< 100 pF
−−100 ps
t
PWA
pulse width adjustment on
pins LA
R
PWA
=10k;
C
PWA
< 100 pF
0 ps
t
PWA(max)
maximum pulse width
adjustment on pins LA
R
PWA
=20k;
C
PWA
< 100 pF
100 ps
2003 Jun 05 15
Philips Semiconductors Product specification
30 Mbits/s up to 1.25 Gbits/s laser drivers TZA3047A; TZA3047B
12 APPLICATION INFORMATION
12.1 Design equations
12.1.1 BIAS AND MODULATION CURRENTS
The bias and modulation currents are determined by the
voltages on pins BIASIN and MODIN. These voltages are
applied by the BIASOUT and MODOUT pins for dual-loop
control. For average loop control the BIASIN voltage is
applied by the BIASOUT pin and the MODIN voltage is
applied by an external voltage source or an external
resistor R
MODIN
.
For direct setting of bias and the modulation current, the
BIASIN and MODIN voltages have to be applied by
external voltage sources or by R
BIASIN
and R
MODIN
external resistors connected on BIASIN and MODIN pins:
I
BIAS
=(R
BIASIN
× 100 µA 0.5 V) × g
m(bias)
[mA]
I
mod
=(R
MODIN
× 100 µA 0.5 V) × g
m(mod)
+ 5 [mA]
The bias and modulation current sources operate with an
input voltage range from 0.5 to 1.5 V. The output current is
at its minimum level for an input voltage below 0.4 V;
see Figs 3 and 4.
The bias and modulation current sources are temperature
compensated and the adjusted current level remains
stable over the temperature range.
The bias and modulation currents increase with increasing
resistor values for R
BIASIN
and R
MODIN
respectively, this
allows resistor tuning to start at a minimum current level.
12.1.2 A
VERAGE MONITOR CURRENT AND EXTINCTION
RATIO
The average monitor current I
av(MON)
in dual-loop or
average loop operation is determined by the source
current (I
AVR
) of the AVR pin. The current can be sunk by
an external current source or by an external resistor (R
AVR
)
connected to ground:
I
av(MON)
= 1580 5.26 × I
AVR
=1580 5.26 ×[µA]
The extinction ratio in dual-loop operation is determined by
the source current (I
ER
) of the ER pin. The current can be
sunk by an external current source or by an external
resistor (R
ER
) connected to ground:
The average monitor current and the extinction ratio as a
function of the I
AVR
and I
ER
current are illustrated in Fig.5.
The average monitor current increases with a decreasing
I
AVR
or increasing R
AVR
, this allows resistor tuning of R
AVR
to start at minimum I
AVR
current level.
The formulas used to program AVR and ER are valid for
typical conditions; tuning is necessary to achieve good
absolute accuracy of AVR and ER values.
handbook, halfpage
MGT890
V
BIASIN
(V)
I
BIAS
(mA)
I
BIAS(min)
g
m(bias)
=
110 mA/V
0
110
0.2
0.5 1.5
Fig.3 Bias current as a function of BIASIN voltage.
handbook, halfpage
MGT891
V
MODIN
(V)
I
mod
= I
o(LA)
(mA)
I
o(LA)(min)
g
m(mod)
=
100 mA/V
0
105
5
0.5 1.5
Fig.4 Modulation current as a function of MODIN
voltage.
LA current when LA output is on.
V
o(LA)
=V
CCO
.
V
AVR
R
AVR
--------------
ER 20
I
ER
2 µA
---------------
20
1
2 µA
-------------
V
ER
R
ER
----------
×==

TZA3047BVH/C1,551

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
IC LASER DRIVER 1.25GBPS 32-HBCC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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