Data Sheet BTS555
Infineon Technologies AG 10 2008-June-24
Inverse load current operation
PROFET
V
IN
OUT
IS
bb
V
bb
V
OUT
- I
L
R
IS
V
IS
V
IN
+
-
+
-
I
IS
The device is specified for inverse load current
operation (V
OUT
> V
bb
> 0V). The current sense feature
is not available during this kind of operation (I
IS
= 0).
With I
IN
= 0 (e.g. input open) only the intrinsic drain
source diode is conducting resulting in considerably
increased power dissipation. If the device is switched
on (V
IN
= 0), this power dissipation is decreased to the
much lower value R
ON(INV)
* I
2
(specifications see page
4).
Note: Temperature protection during inverse load
current operation is not possible!
Inductive load switch-off energy
dissipation
PROFET
V
IN
OUT
IS
bb
E
E
E
E
AS
bb
L
R
E
Load
L
R
L
{
Z
L
R
IS
I
IN
V
bb
i (t)
L
Energy stored in load inductance:
E
L
=
1
/
2
·L·I
2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
E
AS
= E
bb
+ E
L
- E
R
=
V
ON(CL)
·i
L
(t) dt,
with an approximate solution for R
L
> 0
:
E
AS
=
I
L
· L
2
·R
L
(V
bb
+ |V
OUT(CL)
|) ln (1+
I
L
·R
L
|V
OUT(CL)
|
)
Maximum allowable load inductance for
a single switch off
L = f (I
L
); T
j,start
=
150°C, V
bb
= 12 V, R
L
= 0
L [µH]
I
L
[A]
Externally adjustable current limit
If the device is conducting, the sense current can be
used to reduce the short circuit current and allow
higher lead inductance (see diagram above). The
device will be turned off, if the threshold voltage of T2
is reached by I
S
*R
IS
. After a delay time defined by
R
V
*C
V
T1 will be reset. The device is turned on again,
the short circuit current is defined by I
L(SC)
and the
device is shut down after t
d(SC)
with latch function.
PROFET
IS
IN
IS
R
V
R
Powe
r
GND
Signal
GND
V
bb
OUT
V
C
load
R
T1
T2
IN
Signal
V
bb
1
10
100
1000
10000
100000
1000000
1 10 100 1000
Data Sheet BTS555
Infineon Technologies AG 11 2008-June-24
Options Overview
Type BTS
6510 550P
650P
555
Overtemperature protection with hysteresis X X X
T
j
>150 °C, latch function
25)
T
j
>150 °C, with auto-restart on cooling
X
X
X
Short circuit to GND protection
with overtemperature shutdown
switches off when V
ON
>6 V typ.
(when first turned on after approx. 180 µs)
X
X
X
Overvoltage shutdown
- - -
Output negative voltage transient limit
to V
bb
- V
ON(CL)
X X X
to V
OUT
= -15 V typ X
26)
X
26)
X
26)
25)
Latch except when V
bb
-V
OUT
< V
ON(SC)
after shutdown. In most cases V
OUT
= 0 V after shutdown (V
OUT
0 V only if forced externally). So the device remains latched unless V
bb
< V
ON(SC)
(see page 5). No latch
between turn on and t
d(SC)
.
26)
Can be "switched off" by using a diode D
S
(see page 8) or leaving open the current sense output.
Data Sheet BTS555
Infineon Technologies AG 12 2008-June-24
Characteristics
Current sense versus load current:
I
IS
= f(I
L
)
I
IS
[mA]
I
L
[A]
Current sense ratio:
K
ILIS
= f(I
L
), T
J
= -40 °C
k
ilis
I
L
[A]
Current sense ratio:
K
ILIS
= f(I
L
), T
J
= 25 °C
k
ilis
I
L
[A]
Current sense ratio:
K
ILIS
= f(I
L
), T
J
= 150 °C
k
ilis
I
L
[A]
0
1
2
3
4
5
6
7
0 50 100 150
max
min
20000
25000
30000
35000
40000
45000
50000
55000
60000
65000
0 50 100 150
typ
max
min
20000
25000
30000
35000
40000
45000
50000
55000
60000
65000
0 50 100 150
typ
max
min
20000
25000
30000
35000
40000
45000
50000
55000
60000
65000
0 50 100 150
typ
max
min

BTS555

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
IC HISIDE PWR SWTCH TO218AB/5-1
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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