BTS555 Datasheet BTS555, BTS555 E3146, BTS555E3146HKSA1 | P7-P9

Data Sheet BTS555

Infineon Technologies AG 7 2008-June-24

Truth Table

Input

current

Output Current

Sense

Remark

level

level I

IS

Normal

operation

L

H

L

H

0

nominal

=I

L

/ k

ilis

, up to I

IS

=I

IS,lim

Very high

load current

H H I

IS, lim

up to V

ON

=V

ON(Fold back)

I

IS

no longer proportional to I

L

Current-

limitation

H H 0

V

ON

> V

ON(Fold back)

if V

ON

>V

ON(SC)

, shutdown will occure

Short circuit to

GND

L

H

L

0

Over-

temperature

L

H

L

0

Short circuit to

V

bb

L

H

0

<nominal

23)

Open load L

H

Z

24

)

H

0

Negative output

voltage clamp

L L 0

Inverse load

current

L

H

0

L = "Low" Level

H = "High" Level

Overtemperature reset via input: I

IN

=low and T

j

< T

jt

(see diagram on page14)

Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 14)

23)

Low ohmic short to V

bb

may reduce the output current I

L

and can thus be detected via the sense current I

IS

.

24)

Power Transistor "OFF", potential defined by external impedance.

Terms

PROFET

V

IN

IS

OUT

bb

V

IN

I

IS

I

IN

V

bb

I

bb

I

L

V

OUT

V

ON

2

4

3

1,5

R

IS

V

IS

V

bIN

R

IN

D

S

V

bIS

Two or more devices can easily be connected in

parallel to increase load current capability.

R

ON

measurement layout (straight leads)

Sense

V force contacts Out Force

bb

contacts

5.5 mm

contacts

(both out

pins parallel)

≤

Data Sheet BTS555

Infineon Technologies AG 8 2008-June-24

Input circuit (ESD protection)

IN

ZD

IN

I

V

bb

R

bb

V

Z,IN

V

bIN

V

IN

When the device is switched off (I

IN

= 0) the voltage

between IN and GND reaches almost V

bb

. Use a

mechanical switch, a bipolar or MOS transistor with

appropriate breakdown voltage as driver.

V

Z,IN

= 66 V (typ).

Current sense status output

IS

R

IS

I

ZD

IS

V

bb

V

bb

R

Z,IS

V

Z,IS

= 66 V (typ.), R

IS

= 1 kΩ nominal (or 1 kΩ /n, if n

devices are connected in parallel). I

S

= I

L

/k

ilis

can be

only driven by the internal circuit as long as V

out

- V

IS

>

5V. If you want to measure load currents up to I

L(M)

,

R

IS

should be less than

ilisML

bb

KI

VV

/

5

)(

−

.

Note: For large values of R

IS

the voltage V

IS

can reach

almost V

bb

. See also overvoltage protection.

If you don't use the current sense output in your

application, you can leave it open.

Short circuit detection

Fault Condition: V

ON

> V

ON(SC)

(6 V typ.) and t> t

d(SC)

(80 ...300 µs).

Short circuit

detection

Logic

unit

+ V

bb

OUT

V

ON

Inductive and overvoltage output clamp

+ V

bb

OUT

PROFET

V

Z1

V

ON

D

S

IS

V

OUT

V

ZG

V

ON

is clamped to V

ON(Cl)

= 42 V typ. At inductive load

switch-off without D

S

, V

OUT

is clamped to V

OUT(CL)

=

-17

V typ. via V

ZG

. With D

S

, V

OUT

is clamped to V

bb

-

V

ON(CL)

via V

Z1

. Using D

S

gives faster deenergizing of

the inductive load, but higher peak power dissipation in

the PROFET. In case of a floating ground with a

potential higher than 19V referring to the OUT –

potential the device will switch on, if diode DS is not

used.

Overvoltage protection of logic part

+ V

bb

V

OUT

IN

bb

R

Signal GND

Logic

PROFET

V

Z,IS

R

IS

IN

R

IS

V

Z,IN

R

V

Z,VIS

R

bb

= 120 Ω typ., V

Z,IN

= V

Z,IS

= 66 V typ., R

IS

= 1 kΩ

nominal. Note that when overvoltage exceeds 71 V typ.

a voltage above 5V can occur between IS and GND, if

R

V

, V

Z,VIS

are not used.

Data Sheet BTS555

Infineon Technologies AG 9 2008-June-24

Reverse battery protection

Logic

IS

IN

IS

R

V

R

OUT

L

R

Power GND

Signal GND

V

bb

-

Power

Transistor

IN

R

bb

R

D

S

D

R

V

≥ 1 kΩ, R

IS

= 1 kΩ nominal. Add R

IN

for reverse

battery protection in applications with V

bb

above

16

V

19)

; recommended value:

1

R

IN

+

1

R

IS

+

1

R

V

=

0.1A

|V

bb

| - 12V

if D

S

is not used (or

1

R

IN

=

0.1A

|V

bb

| - 12V

if D

S

is

used).

To minimize power dissipation at reverse battery

operation, the summarized current into the IN and IS

pin should be about 120mA. The current can be

provided by using a small signal diode D in parallel to

the input switch, by using a MOSFET input switch or by

proper adjusting the current through R

IS

and

R

V

.

V

bb

disconnect with energized inductive

load

Provide a current path with load current capability by

using a diode, a Z-diode, or a varistor. (V

ZL

< 72 V or

V

Zb

< 30 V if R

IN

=0). For higher clamp voltages

currents at IN and IS have to be limited to

250 mA.

Version a:

PROFET

V

IN

OUT

IS

bb

V

bb

V

ZL

Version b:

PROFET

V

IN

OUT

IS

bb

V

bb

V

Zb

Note that there is no reverse battery protection when

using a diode without additional Z-diode V

ZL

, V

Zb

.

Version c: Sometimes a neccessary voltage clamp is

given by non inductive loads R

L

connected to the same

switch and eliminates the need of clamping circuit:

PROFET

V

IN

OUT

IS

bb

V

bb

R

L

BTS555

BTS555

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