2003 Apr 15 3
Philips Semiconductors Product specification
Microwave power transistor BLS3135-50
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Equivalent thermal impedance under pulsed microwave operating conditions. Measured with IR-scan with 20 µm
spot size at hotspot.
CHARACTERISTICS
T
j
=25°C unless otherwise specified.
APPLICATION INFORMATION
RF performance at T
h
=25°C in a common-base test circuit.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 75 V
V
CES
collector-emitter voltage R
BE
=0 − 75 V
V
EBO
emitter-base voltage open collector − 2V
I
CM
peak collector current t
p
≤ 100 µs; δ≤10% − 6A
P
tot
total power dissipation t
p
= 100 µs; δ = 10%; T
mb
=25°C − 80 W
T
stg
storage temperature −65 +200 °C
T
j
operating junction temperature − 200 °C
T
sld
soldering temperature up to 0.2 mm from ceramic cap;
t ≤ 10 s
− 235 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Z
th j-h
thermal impedance from junction to heatsink
t
p
= 100 µs; δ = 10%; note 1 0.71 K/W
t
p
= 300 µs; δ = 10%; note 1 0.99 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)CBO
collector-base breakdown voltage I
C
= 15 mA; open emitter 75 − V
V
(BR)CES
collector-emitter breakdown voltage I
C
= 15 mA; V
BE
=0 75 − V
I
CBO
collector leakage current V
CB
=40V; I
E
=0 − 1.5 mA
I
CES
collector leakage current V
CE
=40V; V
BE
=0 − 3mA
I
EBO
emitter leakage current V
EB
= 1.5 V; I
C
=0 − 0.3 mA
h
FE
DC current gain V
CB
=5V; I
C
= 1.5 A 40 −
MODE OF OPERATION
f
(GHz)
V
CE
(V)
P
L
(W)
G
p
(dB)
η
C
(%)
Class-C; t
p
= 100 µs; δ = 10% 3.1 to 3.5 40 ≥50
typ. 55
≥7
typ. 8
≥35
typ. 40
