BLS3135-50,114

2003 Apr 15 4
Philips Semiconductors Product specification
Microwave power transistor BLS3135-50
Typical impedance
FREQUENCY
(GHZ)
Z
S
()
Z
L
()
3.1 23.5 j 5.6 7.8 j 3.7
3.2 23.6 j 4.3 7.3 j 4.1
3.3 23.8 j 2.9 6.6 j 4.3
3.4 24.3 j 1.6 5.8 j 4.2
3.5 24.9 j 0.3 5.1 j 4.1
2003 Apr 15 5
Philips Semiconductors Product specification
Microwave power transistor BLS3135-50
handbook, halfpage
02
P
D
(W)
P
L
(W)
10
80
60
20
0
40
46 8
MCD758
(2)
(3)
(3)
(1)
Fig.2 load power as a function of drive
power; typical values.
V
CB
= 40 V; class-C; t
p
= 100 µs; δ = 10%.
(1) f = 3.5 GHz.
(2) f = 3.3 GHz.
(3) f = 3.1 GHz.
Fig.3 Power gain as a function of load
power; typical values.
V
CB
= 40 V; class-C; P
L
= 50 W; t
p
= 100 µs; δ = 10%.
(1) f = 3.5 GHz.
(2) f = 3.3 GHz.
(3) f = 3.1 GHz.
handbook, halfpage
0
(3)
(1)(2)
G
p
(dB)
20 40 80
10
2
2
4
8
0
6
60
P
L
(W)
MCD759
Fig.4 Collector efficiency as a function of load
power; typical values.
V
CB
= 40 V; class-C; t
p
= 100 µs; δ = 10%.
(1) f = 3.5 GHz.
(2) f = 3.3 GHz.
(3) f = 3.1 GHz.
handbook, halfpage
0
η
C
(%)
20
P
L
(W)
40 80
50
0
40
60
30
20
10
MCD760
(3)
(1)(2)
Fig.5 Power gain and input return losses as
functions of frequency; typical values.
V
CB
= 40 V; class-C; P
L
= 50 W; t
p
= 100 µs; δ = 10%.
handbook, halfpage
3.0 3.5
20
0
4
8
12
16
10
0
2
4
6
8
3.1
G
p
(dB)
f (GHz)
3.2
G
p
3.3
Return
Losses
(dB)
3.4
MCD761
Return
Losses
2003 Apr 15 6
Philips Semiconductors Product specification
Microwave power transistor BLS3135-50
handbook, full pagewidth
MCD762
30 30
40
outputinput
C1
C2
Fig.6 Component layout for 3.1 to 3.5 GHz class-C test circuit.
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Duroid dielectric (ε
r
= 2.2), thickness 0.38 mm.
The other side is unetched and serves as a ground plane.
C1 = C2 = ATC 100A 5.1 pF

BLS3135-50,114

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
RF TRANS NPN 75V 3.5GHZ CDFM2
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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