0.5A to 2.0A High-side Power Distribution Switches AP2822
Dec.
2012 Rev 1. 1 BCD Semiconductor Manufacturing Limited
13
Typical Performance Characteristics (Continued)
Figure 16. UVLO Voltage vs. Ambient Temperature Figure 17. Flag Delay Time during Over Current
vs. Ambient Temperature
Figure 18. Flag Delay Time during Over Current Figure 19. Output Short to GND Current
vs. Supply Voltage vs. Supply Voltage
-40.0 -20.0 0.0 20.0 40.0 60.0 80.0
2.20
2.25
2.30
2.35
2.40
2.45
2.50
2.55
2.60
2.65
2.70
Ambient Temperature (
O
C)
Enable Active
V
IN
Rising
V
IN
Falling
Under Voltage Lockout Threshold Voltage (V)
-40.0 -20.0 0.0 20.0 40.0 60.0 80.0
5
6
7
8
9
10
11
12
13
14
15
V
IN
=5V
Enable Active
Flag Delay Time during Over Current (ms)
Ambient Temperature (
O
C)
3.0 3.5 4.0 4.5 5.0 5.5
6
8
10
12
14
Supply Voltage (V)
T
A
=25
O
C
V
IN
=5V
Enable Active
Flag Delay Time during Over Current (ms)
3.0 3.5 4.0 4.5 5.0
1.00
1.02
1.04
1.06
1.08
1.10
1.12
1.14
1.16
1.18
1.20
1.22
1.24
1.26
1.28
1.30
For AP2822 E/F/G/H
Supply Voltage (V)
Output Short to GND Current (A)
V
IN
=5V
Enable Active
0.5A to 2.0A High-side Power Distribution Switches AP2822
Dec.
2012 Rev 1. 1 BCD Semiconductor Manufacturing Limited
14
Typical Performance Characteristics (Continued)
Figure 20. Output Short to GND Current Figure 21. Enable Threshold Voltage
vs. Ambient Temperature vs. Ambient Temperature
Figure 22. Enable Threshold Voltage Figure 23. Output Turn On and Rise Time
vs. Supply Voltage (C
IN
=1.0μF, C
OUT
=1.0μF, No Load)
-40.0 -20.0 0.0 20.0 40.0 60.0 80.0
1.0
1.1
1.2
1.3
1.4
1.5
For AP2822 E/F/G/H
Ambient Temperature (
O
C)
Output Short to GND Current (A)
V
IN
=5V
Enable Active
-40.0 -20.0 0.0 20.0 40.0 60.0 80.0
1.0
1.1
1.2
1.3
1.4
1.5
1.6
V
ENH
V
ENL
Ambient Temperature (
O
C)
V
IN
=5V
Enable Threshold Voltage (V)
3.0 3.5 4.0 4.5 5.0 5.5
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
Supply Voltage (V)
V
ENH
V
ENL
T
A
=25
O
C
Enable Threshold Voltage (V)
V
EN
5V/div
I
INRUSH
20mA/div
V
OUT
1V/div
Time 500μs/div
0.5A to 2.0A High-side Power Distribution Switches AP2822
Dec.
2012 Rev 1. 1 BCD Semiconductor Manufacturing Limited
15
Typical Performance Characteristics (Continued)
Figure 24. Output Turn
On and Rise Time Figure 25. Output Turn On and Rise Time
(C
IN
=1.0μF, C
OUT
=1.0μF, R
L
=3.3Ω) (C
IN
=1.0μF, C
OUT
=100μF, No Load)
Figure 26. Output Turn Off and Fall Time Figure 27. Output Turn Off and Fall Time
(V
IN
=5V, C
IN
=1.0μF, No Load) (V
IN
=5V, C
IN
=1.0μF, C
OUT
=470μF, R
L
=3.3Ω)
V
EN
5V/div
I
INRUSH
1A/div
Time 500μs/div
Time 500μs/div
Time 5ms/div
Time 500μs/div
V
OUT
1V/div
V
EN
5V/div
I
INRUSH
1A/div
V
OUT
1V/div
V
EN
5V/div
V
OUT
1V/div
V
EN
5V/di
v
V
OUT
1V/div
C
OUT
=100μF
C
OUT
=22μF
C
OUT
=1μF
C
OUT
=470μF
C
OUT
=220μF
I
OUT
1A/div

AP2822GKBTR-G1

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Power Switch ICs - Power Distribution 0.5A to 2.0A H-Side 6.0V Power Switch
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union