0.5A to 2.0A High-side Power Distribution Switches AP2822
Dec.
2012 Rev 1. 1 BCD Semiconductor Manufacturing Limited
9
Electrical Characteristics
(V
IN
=5.0V, C
IN
=2.2µF, C
OUT
=1.0µF, Typical T
A
=25°C, unless otherwise specified)
Parameter Symbol Condition Min Typ Max Unit
Supply Voltage V
IN
2.7 5.5 V
Switch On Resistance R
DS(ON)
V
IN
=5.0V, I
OUT
=2.0A 85 110 mΩ
Current Limit I
LIMIT
AP2822A/B(0.5A) , V
OUT
=4.0V 0.7 1.0 1.4
A
AP2822C/D(1.0A), V
OUT
=4.0V 1.1 1.5 2.1
AP2822E/F(1.5A), V
OUT
=4.0V 1.65 2.2 2.8
AP2822G/H(2.0A), V
OUT
=4.0V 2.2 2.7 3.2
Supply Current I
SUPPLY
V
IN
=5.0V, No Load 68 95 µA
Fold-back Short Current I
SHORT
AP2822 A/B/C/D, V
OUT
=0V 0.7
A
AP2822 E/F/G/H, V
OUT
=0V 1.1
Shutdown Supply Current I
SHUTDOWN
Chip Disable, Shutdown Mode 0.1 1.0 µA
Enable High Input Threshold V
ENH
1.6 5.5 V
Enable Low Input Threshold V
ENL
0 1.0 V
Enable Pin Input Current I
EN
Force 0V to 5.0V at EN Pin -1.0 1.0 µA
Under Voltage Lockou
Threshold Voltage
V
UVLO
V
IN
Increasing from 0V 2.2 2.5 3.0 V
Under Voltage Hysteresis V
UVLOHY
0.2 V
Reverse Current I
REVERSE
Chip Disable, V
OUT
>V
IN
0.1 1.0 µA
Output Pull Low Resistance
after Shutdown
R
DISCHARGE
100 200 Ω
Output Turn-on Time t
ON
From Enable Active to 90% o
Output
500 µs
FLAG Pin Delay Time t
DFLG
From Over Current Fault Condition
to Flag Active
5 10 15 ms
FLAG Pin Low Voltage V
FLG
I
SINK
=5.0mA 35 70 mV
FLAG Pin Leakage Current I
LEAKAGE
FLAG Disable, Force 5.0V 1.0 µA
Thermal Shutdown
Temperature
T
OTSD
150
o
C
Thermal Shutdown Hysteresis T
HYOTSD
30
