SIA477EDJ-T1-GE3 Datasheet SIA477EDJ-T1-GE3 | P1-P3

Vishay Siliconix

SiA477EDJ

Document Number: 62798

S12-3080-Rev. A, 24-Dec-12

www.vishay.com

1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

P-Channel 12 V (D-S) MOSFET

FEATURES

• TrenchFET

®

Power MOSFET

• Thermally Enhanced PowerPAK

®

SC-70 Package

- Small Footprint Area

- Low On-Resistance

•100 % R

g

Tested

• Built in ESD Protection with Zener Diode

• Typical ESD Performance: 3800 V (HBM)

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

•

Portable Devices such as

Smart Phones, Tablet PCs

and Mobile Computing

- Battery Switch

- Load Switch

- Power Management

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See solder profile (www.vishay.com/doc?73257

). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 80 °C/W.

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

() Max.

I

D

(A)

a

Q

g

(Typ.)

- 12

0.0140 at V

GS

= - 4.5 V

- 12

34.7 nC

0.0160 at V

GS

= - 3.7 V

- 12

0.0190 at V

GS

= - 2.5 V

- 12

0.0330 at V

GS

= - 1.8 V

- 12

PowerPAK SC-70-6L-Single

6

5

4

1

2

3

D

G

S

2.05 mm

Marking Code

X X X

BX X

Lot Traceability

and Date code

Part # code

Ordering Information: SiA477EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

S

D

G

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage V

DS

- 12

V

Gate-Source Voltage V

GS

± 8

Continuous Drain Current (T

J

= 150 °C)

T

C

= 25 °C

I

D

- 12

a

A

T

C

= 70 °C

- 12

a

T

A

= 25 °C

- 12

a,b, c

T

A

= 70 °C

- 10.6

b, c

Pulsed Drain Current (t = 300 µs) I

DM

- 40

Continuous Source-Drain Diode Current

T

C

= 25 °C

I

S

- 12

a

T

A

= 25 °C

- 2.9

b, c

Maximum Power Dissipation

T

C

= 25 °C

P

D

19

W

T

C

= 70 °C 12

T

A

= 25 °C

3.5

b, c

T

A

= 70 °C

2.2

b, c

Operating Junction and Storage Temperature Range T

J

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

d, e

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b, f

t  5 s

R

thJA

28 36

°C/W

Maximum Junction-to-Case (Drain) Steady State R

thJC

5.3 6.5

www.vishay.com

2

Document Number: 62798

S12-3080-Rev. A, 24-Dec-12

Vishay Siliconix

SiA477EDJ

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

Notes:

a. Pulse test; pulse width  300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

DS

V

GS

= 0 V, I

D

= - 250 µA

- 12 V

V

DS

Temperature Coefficient V

DS

/T

J

I

D

= - 250 µA

- 4

mV/°C

V

GS(th)

Temperature Coefficient V

GS(th)

/T

J

2.9

Gate-Source Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= - 250 µA

- 0.4 - 1 V

Gate-Source Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 8 V

± 30

µA

V

DS

= 0 V, V

GS

= ± 4.5 V

± 1

Zero Gate Voltage Drain Current

I

DSS

V

DS

= - 12 V, V

GS

= 0 V

- 1

V

DS

= - 12 V, V

GS

= 0 V, T

J

= 55 °C

- 10

On-State Drain Current

a

I

D(on)

V

DS

- 5 V, V

GS

= - 4.5 V

- 20 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= - 4.5 V, I

D

= - 7 A

0.0116 0.0140



V

GS

= - 3.7 V, I

D

= - 5 A

0.0130 0.0160

V

GS

= - 2.5 V, I

D

= - 3 A

0.0158 0.0190

V

GS

= - 1.8 V, I

D

= - 1 A 0.0250 0.0330

Forward Transconductance

a

g

fs

V

DS

= - 6 V, I

D

= - 7 A

31 S

Dynamic

b

Input Capacitance C

iss

V

DS

= - 6 V, V

GS

= 0 V, f = 1 MHz

2970

pF

Output Capacitance C

oss

710

Reverse Transfer Capacitance C

rss

724

Total Gate Charge

Q

g

V

DS

= - 6 V, V

GS

= - 8 V, I

D

= - 13.3 A

58 87

nCGate-Source Charge

V

DS

= - 6 V, V

GS

= - 4.5 V, I

D

= - 13.3 A

34.7 52

Q

gs

5.5

Gate-Drain Charge

Q

gd

7.8

Gate Resistance

R

g

f = 1 MHz 1 5 10 

Tur n - O n D e l ay Time

t

d(on)

V

DD

= - 6 V, R

L

= 0.6 

I

D

 - 10 A, V

GEN

= - 4.5 V, R

g

= 1 

30 45

ns

Rise Time

t

r

28 42

Turn-Off Delay Time

t

d(off)

74 111

Fall Time

t

f

45 68

Tur n - O n D e l ay T im e

t

d(on)

V

DD

= - 6 V, R

L

= 0.6 

I

D

 - 10 A, V

GEN

= - 8 V, R

g

= 1 

10 20

Rise Time

t

r

918

Turn-Off Delay Time

t

d(off)

80 120

Fall Time

t

f

40 60

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

I

S

T

C

= 25 °C

- 12

A

Pulse Diode Forward Current

I

SM

- 40

Body Diode Voltage

V

SD

I

S

= - 10 A, V

GS

= 0 V

- 0.8 - 1.2 V

Body Diode Reverse Recovery Time

t

rr

I

F

= - 10 A, dI/dt = 100 A/µs, T

J

= 25 °C

18 27 ns

Body Diode Reverse Recovery Charge

Q

rr

612nC

Reverse Recovery Fall Time

t

a

11

ns

Reverse Recovery Rise Time

t

b

7

Document Number: 62798

S12-3080-Rev. A, 24-Dec-12

www.vishay.com

3

Vishay Siliconix

SiA477EDJ

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Gate-Source Voltage vs. Gate Current

Output Characteristics

On-Resistance vs. Drain Current

0.000

0.005

0.010

0.015

0.020

0 3 6 9 12

I

GSS

- Gate Current (mA)

V

GS

- Gate-Source Voltage (V)

T

J

= 25 °C

0

10

20

30

40

00.511.52

I

D

- Drain Current (A)

V

DS

- Drain-to-Source Voltage (V)

V

GS

=1.8 V

V

GS

= 2.5 V

V

GS

= 8 V thru 3 V

V

GS

= 2 V

0.000

0.020

0.040

010203040

R

DS(on)

- On-Resistance (Ω)

I

D

- Drain Current (A)

V

GS

= 1.8 V

V

GS

= 2.5 V

V

GS

= 4.5 V

V

GS

= 3.7 V

Gate-Source Voltage vs. Gate Current

Transfer Characteristics

Capacitance

1.E-09

1.E-08

1.E-07

1.E-06

1.E-05

1.E-04

1.E-03

1.E-02

0 3 6 9 12 15

I

GSS

- Gate Current (A)

V

GS

- Gate-to-Source Voltage (V)

T

J

= 150 °C

T

J

= 25 °C

0

0.1

0.2

0.3

0.4

0.5

0 0.3 0.6 0.9 1.2 1.5

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

T

C

= 25 °C

T

C

= 125 °C

T

C

= - 55 °C

0

900

1800

2700

3600

4500

036912

C - Capacitance (pF)

V

DS

- Drain-to-Source Voltage (V)

C

i

ss

C

oss

C

rss

SIA477EDJ-T1-GE3

SIA477EDJ-T1-GE3

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