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SIA477EDJ-T1-GE3

P1-P3P4-P6P7-P9
www.vishay.com
4
Document Number: 62798
S12-3080-Rev. A, 24-Dec-12
Vishay Siliconix
SiA477EDJ
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
0
2
4
6
8
015304560
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
= 9.6 V
V
DS
= 3 V
V
DS
= 6 V
I
D
= 13.3 A
0.7
0.9
1.1
1.3
1.5
-50-250 255075100125150
R
DS(on)
- On-Resistance
(Normalized)
T
J
- Junction Temperature (°C)
V
GS
= 4.5 V, I
D
= 7 A
V
GS
= 3.7 V I
D
= 5 A
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Single Pulse Power, Junction to Ambient
0.000
0.010
0.020
0.030
0.040
0.050
12345
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 125 °C
T
J
= 25 °C
I
D
= 4.3 A
0.2
0.35
0.5
0.65
0.8
- 50 - 25 0 25 50 75 100 125 150
V
GS(th)
(V)
T
J
-Temperature (°C)
I
D
= 250 μA
Power (W)
Time (s)
10 10000.10.010.001 1001
0
5
10
15
20
25
30
Document Number: 62798
S12-3080-Rev. A, 24-Dec-12
www.vishay.com
5
Vishay Siliconix
SiA477EDJ
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
Safe Operating Area, Junction-to-Ambient
0.01
0.1
1
10
100
0.1 1 10 100
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
100 ms
Limited by R
DS
(
on
)
*
1 ms
T
A
= 25 °C
BVDSS Limited
10 ms
100 μs
10s, 1 s
DC
Current Derating*
0
7
14
21
28
35
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
Package Limited
Power Derating
0
5
10
15
20
25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power Dissipation (W)
www.vishay.com
6
Document Number: 62798
S12-3080-Rev. A, 24-Dec-12
Vishay Siliconix
SiA477EDJ
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62798
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1
10
100010
-1
10
-4
100
0.2
0.1
0.05
0.02
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 80 C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
10
-4
1
0.1
0.2
0.1
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.02
Single Pulse
0.05
10
-1
P1-P3P4-P6P7-P9

SIA477EDJ-T1-GE3

Mfr. #:
Buy SIA477EDJ-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 12V 14mOhm@4.5V 12A P-Ch
Lifecycle:
New from this manufacturer.
Delivery:
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