OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

ZXMS6004N8Q-13

P1-P3P4-P6P7-P8
IntelliFET is a registered trademark of Diodes Incorporated.
ZXMS6004N8Q
Document number: DS38897 Rev. 2 - 2
1 of 8
www.diodes.com
June 2016
© Diodes Incorporated
ADVANCE INFO R MA T I O N
ZXMS6004N8Q
qDMN2027USS
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE LOW-SIDE INTELLIFET
Product Summary
V
DS
R
DS(ON)
E
AS
60V
500mΩ
120mJ
Description
The ZXMS6004N8Q is a self-protected low side IntelliFET
®
with logic
level input. It integrates over-temperature, overcurrent, overvoltage
(active clamp) and ESD protected logic level functionality. The
ZXMS6004N8Q is ideal as a general purpose switch driven from 3.3V
or 5V microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.
Applications
Especially Suited for Loads with a High In-rush Current Such As
Lamps and Motors
All types of resistive, inductive and capacitive loads in switching
applications
μC Compatible Power Switch for 12V and 24V DC Applications
Replaces electromechanical relays and discrete circuits
Linear Mode capability - the current-limiting protection circuitry is
designed to de-activate at low V
DS
to minimize on state power
dissipation. The maximum DC operating current is therefore
determined by the thermal capability of the package/board
combination, rather than by the protection circuitry. This does not
compromise the product‟s ability to self-protect at low V
DS
.
Features and Benefits
Low Input Current
Logic Level Input (3.3V and 5V)
Short Circuit Protection with Auto Restart
Overvoltage Protection (active clamp)
Thermal Shutdown with Auto Restart
Overcurrent Protection
Input Protection (ESD)
High Continuous Current Rating
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Characterized to AEC-Q101-006 Grade E for Short-circuit
Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 80.2mg (Approximate)
Ordering Information (Note 5)
Part number
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
ZXMS6004N8Q-13
6004N8
13
12
2,500 units
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated‟s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SO-8
Top View
D
S
IN
Device Symbol
D
S
S
S
IN
D
D
D
Top View
Pin Out
6004N8 = Product Name
YY: Year
WW: Week: 01~52;
52 represents 52 and 53 week
e3
Logo
Part No.
Pin 1.
6004N8
YY WW
Top View
IntelliFET is a registered trademark of Diodes Incorporated.
ZXMS6004N8Q
Document number: DS38897 Rev. 2 - 2
2 of 8
www.diodes.com
June 2016
© Diodes Incorporated
ADVANCE INFO R MA T I O N
ZXMS6004N8Q
qDMN2027USS
Functional Block Diagram
Absolute Maximum Ratings (@T
A
= +25°C, unless otherwise stated.)
Characteristic
Symbol
Value
Units
Continuous Drain-Source Voltage
V
DS
60
V
Drain-Source Voltage for Short Circuit Protection
V
DS(SC)
36
V
Continuous Input Voltage
V
IN
-0.5 to +6
V
Continuous Input Current @-0.2V ≤ V
IN
≤ 6V
Continuous Input Current @V
IN
< -0.2V or V
IN
> 6V
I
IN
No limit
│I
IN
│ 2
mA
Pulsed Drain Current @V
IN
= 3.3V
I
DM
2
A
Pulsed Drain Current @V
IN
= 5V
I
DM
2.5
A
Continuous Source Current (Body Diode) (Note 5)
I
S
1
A
Pulsed Source Current (Body Diode)
I
SM
5
A
Unclamped Single Pulse Inductive Energy,
T
J
= +25°C, I
D
= 0.5A, V
DD
= 24V
E
AS
120
mJ
Electrostatic Discharge (Human Body Model)
V
HBM
4,000
V
Charged Device Model
V
CDM
1,000
V
Thermal Resistance (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Power Dissipation at T
A
= +25°C
(Note 5)
Linear Derating Factor
P
D
1.28
10
W
mW/°C
Power Dissipation at T
A
= +25°C (Note 6)
Linear Derating Factor
P
D
1.65
12.4
W
mW/°C
Thermal Resistance, Junction to Ambient
(Note 5)
R
θJA
98
°C/W
Thermal Resistance, Junction to Ambient (Note 6)
R
θJA
76
°C/W
Thermal Resistance, Junction to Case
(Note 7)
R
θJC
12
°C/W
Operating Temperature Range
T
J
-40 to +150
°C
Storage Temperature Range
T
STG
-55 to +150
°C
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Thermal resistance between junction and the mounting surfaces of drain and source pins.
dV/dt
limitation
IntelliFET is a registered trademark of Diodes Incorporated.
ZXMS6004N8Q
Document number: DS38897 Rev. 2 - 2
3 of 8
www.diodes.com
June 2016
© Diodes Incorporated
ADVANCE INFO R MA T I O N
ZXMS6004N8Q
qDMN2027USS
Recommended Operating Conditions
The ZXMS6004N8Q is optimized for use with μC operating from 3.3V and 5V supplies.
Characteristic
Symbol
Min
Max
Unit
Input Voltage Range
V
IN
0
5.5
V
Ambient Temperature Range
T
A
-40
+125
°C
High Level Input Voltage for MOSFET to be on
V
IH
3
5.5
V
Low Level Input Voltage for MOSFET to be off
V
IL
0
0.7
V
Peripheral Supply Voltage (voltage to which load is referred)
V
P
0
36
V
Electrical Characteristics (@T
A
= +25°C, unless otherwise stated.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Static Characteristics
Drain-Source Clamp Voltage
V
DS(AZ)
60
65
70
V
I
D
= 10mA
Off State Drain Current
I
DSS
–
–
0.5
μA
V
DS
= 12V, V
IN
= 0V
–
–
1
V
DS
= 36V, V
IN
= 0V
Input Threshold Voltage
V
IN(TH)
0.7
1
1.5
V
V
DS
= V
GS
, I
D
= 1mA
Input Current
I
IN
–
60
100
μA
V
IN
= 3V
–
120
200
V
IN
= 5V
Input Current While Over-Temperature Active
–
–
–
400
μA
V
IN
= 5V
Static Drain-Source On-State Resistance
R
DS(ON)
–
400
600
mΩ
V
IN
= 3V, I
D
= 0.5A
–
350
500
V
IN
= 5V, I
D
= 0.5A
Continuous Drain Current (Note 5)
I
D
0.9
–
–
A
V
IN
= 3V, T
A
= +25°C
1.0
–
–
V
IN
= 5V, T
A
= +25°C
Continuous Drain Current (Note 6)
1.2
–
–
V
IN
= 3V, T
A
= +25°C
1.3
–
–
V
IN
= 5V, T
A
= +25°C
Current Limit (Note 8)
I
D(LIM)
0.7
1.7
–
A
V
IN
= 3V
1
2.2
–
V
IN
= 5V
Dynamic Characteristics
Turn On Delay Time
t
D(ON)
–
5
–
μs
V
DD
= 12V, I
D
= 0.5A, V
GS
=
5V
Rise Time
t
R
–
10
–
Turn Off Delay Time
t
D(OFF)
–
45
–
Fall Time
t
F
–
15
–
Over-Temperature Protection
Thermal Overload Trip Temperature (Note 9)
T
JT
+150
+175
–
°C
–
Thermal Hysteresis (Note 9)
∆T
JT
–
+10
–
°C
–
Notes: 8. The drain current is restricted only when the device is in saturation (see graph „typical output characteristic‟). This allows the device to be used in the fully
on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside
saturation makes current limit unnecessary.
9. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal
operating range, so this part is not designed to withstand over-temperature for extended periods.
P1-P3P4-P6P7-P8

ZXMS6004N8Q-13

Mfr. #:
Buy ZXMS6004N8Q-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET Low Side IntelliFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet