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ZXMS6004N8Q-13

P1-P3P4-P6P7-P8
IntelliFET is a registered trademark of Diodes Incorporated.
ZXMS6004N8Q
Document number: DS38897 Rev. 2 - 2
4 of 8
www.diodes.com
June 2016
© Diodes Incorporated
ADVANCE INFO R MA T I O N
ZXMS6004N8Q
qDMN2027USS
0.01
0.1
1
10
0.1 1 10 100
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
SOA, Safe Operation Area
Single Pulse
T
J(Max)
= 150℃
T
C
= 25℃
V
GS
= 5V
R
DS(ON)
Limited
DC
P
W
= 10s
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
P
W
= 100µs
0.00
0.20
0.40
0.60
0.80
1.00
1.20
1.40
1.60
1.80
0 25 50 75 100 125 150 175
P
D
, POWER DISSIPATION (W)
T
A
, AMBIENT TEMPERATURE (℃)
DC Forward Current Derating
0
10
20
30
40
50
60
70
80
90
100
0.0001 0.001 0.01 0.1 1 10 100 1000
r(t), TRANSIENT THERMAL RESISTANCE
(
o
C/W)
t1, PULSE DURATION TIME (sec)
Transient Thermal Resistance
Duty Cycle,
D = t1/ t2
D=Single Pulse
D=0.005
D=0.01
D=0.02
D=0.05
D=0.1
D=0.3
D=0.5
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
P
(pk)
, PEAK TRANSIENT POWER (W)
t
1
, PULSE DURATION TIME (sec)
Single Pulse Maximum Power Dissipation
Single Pulse
T
A
= 25
o
C
Thermal Characteristics
Note 5
Note 6
Note 6
IntelliFET is a registered trademark of Diodes Incorporated.
ZXMS6004N8Q
Document number: DS38897 Rev. 2 - 2
5 of 8
www.diodes.com
June 2016
© Diodes Incorporated
ADVANCE INFO R MA T I O N
ZXMS6004N8Q
qDMN2027USS
Typical Characteristics
IntelliFET is a registered trademark of Diodes Incorporated.
ZXMS6004N8Q
Document number: DS38897 Rev. 2 - 2
6 of 8
www.diodes.com
June 2016
© Diodes Incorporated
ADVANCE INFO R MA T I O N
ZXMS6004N8Q
qDMN2027USS
Typical Characteristics (Cont.)
V
IN
= 5V
V
DS
= 15V
R
C
= 0Ω
T
A
= 25C°
P1-P3P4-P6P7-P8

ZXMS6004N8Q-13

Mfr. #:
Buy ZXMS6004N8Q-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET Low Side IntelliFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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