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2
Absolute Maximum Ratings T
C
= 25
o
C, Unless Otherwise Specified
ALL TYPES UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
600 V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
34 A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
14 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
CM
56 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
±30 V
Switching Safe Operating Area at T
J
= 150
o
C, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA 35A at 600V
Single Pulse Avalanche Energy at T
C
= 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
25mJ at 7A
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
125 W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
PKG
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications T
J
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BV
CES
I
C
= 250µA, V
GE
= 0V 600 - - V
Emitter to Collector Breakdown Voltage BV
ECS
I
C
= -10mA, V
GE
= 0V 20 - - V
Collector to Emitter Leakage Current I
CES
V
CE
= 600V T
J
= 25
o
C - - 250 µA
T
J
= 125
o
C--2mA
Collector to Emitter Saturation Voltage V
CE(SAT)
I
C
= 7A,
V
GE
= 15V
T
J
= 25
o
C-1.92.7V
T
J
= 125
o
C-1.62.2V
Gate to Emitter Threshold Voltage V
GE(TH)
I
C
= 250µA, V
CE
= 600V 4.5 5.9 7.0 V
Gate to Emitter Leakage Current I
GES
V
GE
= ±20V - - ±250 nA
Switching SOA SSOA T
J
= 150
o
C, R
G
= 25Ω, V
GE
= 15V
L = 100µH, V
CE
= 600V
35 - - A
Pulsed Avalanche Energy E
AS
I
CE
= 7A, L = 500µH25--mJ
Gate to Emitter Plateau Voltage V
GEP
I
C
= 7A, V
CE
= 300V - 9.0 - V
On-State Gate Charge Q
g(ON)
I
C
= 7A,
V
CE
= 300V
V
GE
= 15V - 37 45 nC
V
GE
= 20V - 48 60 nC
Current Turn-On Delay Time t
d(ON)I
IGBT and Diode at T
J
= 25
o
C
I
CE
= 7A
V
CE
= 390V
V
GE
= 15V
R
G
= 25Ω
L = 1mH
Test Circuit (Figure 20)
-11 - ns
Current Rise Time t
rI
-11 - ns
Current Turn-Off Delay Time t
d(OFF)I
- 100 - ns
Current Fall Time t
fI
-45 - ns
Turn-On Energy (Note 2) E
ON1
-55 - µJ
Turn-On Energy (Note 2) E
ON2
- 120 150 µJ
Turn-Off Energy (Note 3) E
OFF
-6075µJ
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4
