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HGTP7N60A4-F102

P1-P3P4-P6P7-P8
www.onsemi.com
4
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
01.0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
5
10
1.5 2.0 3.0
25
20
T
J
= 125
o
C
T
J
= 150
o
C
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V
GE
= 12V
30
T
J
= 25
o
C
0.5 2.5
15
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250µs
T
J
= 150
o
C T
J
= 25
o
C
0
5
10
25
20
30
15
0 1.0 1.5 2.0 3.00.5 2.5
T
J
= 125
o
C
E
ON2
, TURN-ON ENERGY LOSS (µJ)
300
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
200
400
0
42 6 8 101214
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 25Ω, L = 1mH, V
CE
= 390V
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
100
0
500
300
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OFF
, TURN-OFF ENERGY LOSS (µJ)
0
50
200
100
250
350
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
150
R
G
= 25Ω, L = 1mH, V
CE
= 390V
42 6 8 1012140
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(ON)I
, TURN-ON DELAY TIME (ns)
8
14
16
T
J
= 125
o
C, V
GE
= 15V
R
G
= 25Ω, L = 1mH, V
CE
= 390V
12
10
T
J
= 25
o
C, V
GE
= 15V
T
J
= 125
o
C, V
GE
= 12V
T
J
= 25
o
C, V
GE
= 12V
42681012140
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
, RISE TIME (ns)
0
20
10
40
30
R
G
= 25Ω, L = 1mH, V
CE
= 390V
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
42681012140
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4
www.onsemi.com
5
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
Typical Performance Curves Unless Otherwise Specified (Continued)
100
60
80
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
180
140
160
120
V
GE
= 15V, T
J
= 125
o
C
R
G
= 25Ω, L = 1mH,
V
CE
= 390V
42681012140
V
GE
= 12V, T
J
= 125
o
C
V
GE
= 15V, T
J
= 25
o
C
V
GE
= 12V, T
J
= 25
o
C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
, FALL TIME (ns)
20
40
30
60
80
50
70
R
G
= 25Ω, L = 1mH, V
CE
= 390V
90
T
J
= 125
o
C, V
GE
= 12V OR 15V
T
J
= 25
o
C, V
GE
= 12V OR 15V
42 6 8 1012140
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
40
60
8 9 11 12 15
V
GE
, GATE TO EMITTER VOLTAGE (V)
14
80
100
120
7
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V
CE
= 10V
T
J
= 125
o
C T
J
= -55
o
C
T
J
= 25
o
C
20
1310
V
GE
, GATE TO EMITTER VOLTAGE (V)
Q
G
, GATE CHARGE (nC)
0
3
I
G(REF)
= 1mA, R
L
= 43Ω, T
J
= 25
o
C
V
CE
= 200V
V
CE
= 400V
6
9
12
15
5101520 3025 35 400
V
CE
= 600V
I
CE
= 3.5A
0
200
50 75 100
T
C
, CASE TEMPERATURE (
o
C)
400
12525 150
800
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (µJ)
R
G
= 25Ω, L = 1mH, V
CE
= 390V, V
GE
= 15V
600
I
CE
= 14A
I
CE
= 7A
E
TOTAL
= E
ON2
+ E
OFF
0.1
100
R
G
, GATE RESISTANCE (Ω)
1
10 1000
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (mJ)
10
T
J
= 125
o
C, L = 1mH, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 3.5A
I
CE
= 7A
I
CE
= 14A
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4
www.onsemi.com
6
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 21. SWITCHING TEST WAVEFORMS
Typical Performance Curves Unless Otherwise Specified (Continued)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C, CAPACITANCE (nF)
0 20406080100
0
0.2
0.6
0.8
1.4
0.4
FREQUENCY = 1MHz
C
IES
C
OES
C
RES
1.2
1.0
V
GE
, GATE TO EMITTER VOLTAGE (V)
9
1.8
10 12
2.0
2.4
2.2
11 13 14 15 16
2.6
2.8
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
= 14A
I
CE
= 7A
I
CE
= 3.5A
DUTY CYCLE < 0.5%, T
J
= 25
o
C
PULSE DURATION = 250µs,
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θJC
, NORMALIZED THERMAL RESPONSE
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θJC
X R
θJC
) + T
C
SINGLE PULSE
0.1
0.2
0.5
0.05
0.01
0.02
R
G
= 25Ω
L = 1mH
V
DD
= 390V
+
-
RHRP660
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON2
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4
P1-P3P4-P6P7-P8

HGTP7N60A4-F102

Mfr. #:
Buy HGTP7N60A4-F102
Manufacturer:
ON Semiconductor
Description:
N-CH / 7A 600V SMPS 1 IGBT
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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