ESDAVLC12-1BV2

P1-P3 P4-P6 P7-P9

May 2016

DocID027160 Rev 2

1/9

This is information on a product in full production.

www.st.com

ESDAVLC12-1BV2

Single line bidirectional TVS diode for ESD protection

Datasheet - production data

Features

 01005 package size

 Ultra small PCB area: 0.08 mm²

 Bidirectional device

 Low capacitance: 7 pF

 Minimum breakdown voltage: V

BR

= 12 V

 Halogen free and RoHS compliant

Complies with the following standards

 IEC 61000-4-2 level 4

 15 kV (air discharge)

 8 kV (contact discharge)

Applications

Where transient overvoltage protection in ESD

sensitive equipment is required, such as:

 Tablet PCs, netbooks and notebooks

 Portable multimedia devices and

accessories

 Digital cameras and camcorders

 Communication and highly integrated

systems

 Smartphones, mobile phone and

accessories

Description

The ESDAVLC12-1BV2 is a bidirectional single

line TVS diode designed to protect the data lines

or other I/O ports against ESD transients.

The device is ideal for applications where both

reduced printed circuit board space and high

ESD protection levels are required.

Figure 1: Functional diagram

ST01005

Characteristics

ESDAVLC12-1BV2

2/9

DocID027160 Rev 2

1 Characteristics

Table 1: Absolute ratings (T

amb

= 25 °C)

Symbol

Parameter

Value

Unit

V

PP

Peak pulse voltage

IEC 61000-4-2:

Contact discharge

Air discharge

8

15

kV

I

PP

Peak pulse current

8/20μs

1.5

A

T

stg

Storage junction temperature range

-65 to +150

°C

T

j

Maximum operating junction temperature

-40 to +125

T

L

Maximum temperature for soldering during 10 s

260

°C

Figure 2: Electrical characteristics (definitions)

Table 2: Electrical characteristics (T

amb

= 25 °C)

Symbol

Test condition

Min.

Typ.

Max.

Unit

V

BR

I

R

= 1 mA

12

V

I

RM

V

RM

= 10.5 V

2.5

70

nA

R

d

Dynamic resistance, 100 ns pulse duration

2

Ω

V

CL

I

PP

= 1 A; 8/20 µs

20

V

V

CL

8 kV contact discharge after 30 ns IEC 61000-4-2

33

C

line

F = 1 MHz, V

R

= 0 V

7

10

pF

ESDAVLC12-1BV2

Characteristics

DocID027160 Rev 2

3/9

1.1 Characteristics (curves)

Figure 3: Junction capacitance versus applied

voltage

Figure 4: Variation of leakage current versus

junction temperature (typical values)

Figure 5: ESD response to IEC 61000-4-2

(+8 kV contact discharge)

Figure 6: ESD response to IEC 61000-4-2

(-8 kV contact discharge)

Figure 7: TLP measurements

Figure 8: S21 attenuation measurement result

C(pF)

0 2 4 6 8 10 12

7

6

5

4

3

2

1

0

V

R

(V)

0 25

50 75 100 125 150

0

1

2

3

4

5

V

R

= V

RM

= 10.5 V

Forward and reverse

I

R

(nA)

T

j

(°C)

Forward

Reverse

I

PP

(A)

0

2

4

6

8

10

12

14

16

18

20

22

0 5 10 15 20 25 30 35 40 45 50

Linear (VoltageForward (VF))

Linear (Breakdown (VBR))

V

CL

(V)

10M 30M 100M 300M 1G 3G

-40

-35

-30

-25

-20

-15

-10

-5

0

I -O

S21(dB)

F(Hz)

P1-P3 P4-P6 P7-P9

ESDAVLC12-1BV2

Mfr. #:

Buy ESDAVLC12-1BV2

Manufacturer:

STMicroelectronics

Description:

TVS Diodes / ESD Suppressors DFD PROTECTION

Lifecycle:

New from this manufacturer.

Delivery:

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ESDAVLC12-1BV2