PIC18F2X1X/4X1X
DS80227B-page 4 © 2005 Microchip Technology Inc.
10. Module: Electrical Characteristics
Parameters D031A and D041A have been added
to Section 25-3 “DC Characteristics”, as shown
below:
11. Module: Electrical Characteristics
In Table 25-1: Memory Programming Require-
ments, parameters D132, D132A, D133 and
D133A have been changed. The changes are
shown in bold in the following table:
TABLE 25-7: MEMORY PROGRAMMING REQUIREMENTS
25.3 DC Characteristics: PIC18F2X1X/4X1X (Industrial)
PIC18LF2X1X/4X1X (Industrial)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ T
A ≤ +85°C for industrial
Param
No.
Symbol Characteristic Min Max Units Conditions
V
IL Input Low Voltage
I/O ports:
D031A with SMBus buffer V
SS 0.8 V
VIH Input High Voltage
I/O ports:
D041A with SMBus buffer 2.1 V
DD V
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ T
A ≤ +85°C for industrial
Param
No.
Sym Characteristic Min Typ† Max Units Conditions
Program Flash Memory
D132 V
IE VDD for Block Erase 3.0
—
5.5 V Using ICSP™ port, 25°C
D132A VIW VDD for Externally Timed Erase
or Write
4.5
—
5.5 V Using ICSP port, 25°C
D133 T
IE ICSP Block Erase Cycle Time — 4 — ms VDD ≥ 4.5V
D133A TIW ICSP Erase or Write Cycle Time
(externally timed)
1——msVDD ≥ 4.5V, 25°C
D133A T
IW Self-Timed Write Cycle Time — 2 — ms
