SPP11N80C3XKSA1 Datasheet SPP11N80C3XKSA1 | P1-P3

SPP11N80C3

CoolMOS

TM

Power Transistor

Features

• New revolutionary high voltage technology

• Extreme dv/dt rated

• High peak current capability

• Qualified according to JEDEC

1)

for target applications

• Pb-free lead plating; RoHS compliant

• Ultra low gate charge

• Ultra low effective capacitances

CoolMOS

TM

800V designed for:

• Industrial application with high DC bulk voltage

• Switching Application (i.e. active clamp forward)

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

I

D

T

C

=25 °C

A

T

C

=100 °C

Pulsed drain current

2)

I

D,pulse

T

C

=25 °C

Avalanche energy, single pulse

E

AS

I

D

=2.2 A, V

DD

=50 V

470 mJ

Avalanche energy, repetitive t

AR

2),3)

E

AR

I

D

=11 A, V

DD

=50 V

Avalanche current, repetitive t

AR

2),3)

I

AR

A

MOSFET dv/dt ruggedness dv/dt

V

DS

=0…640 V

V/ns

Gate source voltage

V

GS

static V

AC (f>1 Hz)

Power dissipation

P

tot

T

C

=25 °C

W

Operating and storage temperature

T

j

, T

stg

°C

Mounting torque M3 and M3.5 screws 60 Ncm

±30

156

-55 ... 150

0.2

11

50

±20

Value

11

7.1

33

V

DS

800

V

R

DS(on)max

@

T

j

= 25°C 0.45

Ω

Q

g,typ

64 nC

Product Summary

Type Package Marking

SPP11N80C3 PG-TO220-3 11N80C3

PG-TO220-3

Rev. 2.9

1 page 1 2011-09-27

SPP11N80C3

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous diode forward current

I

S

A

Diode pulse current

2)

I

S,pulse

33

Reverse diode dv/dt

4)

dv/dt

4 V/ns

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

R

thJC

- - 0.8 K/W

R

thJA

leaded - - 62

Soldering temperature,

wave soldering only allowed at leads

T

sold

1.6 mm (0.063 in.)

from case for 10s

- - 260 °C

Electrical characteristics, at T

j

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSS

V

GS

=0 V, I

D

=250 µA

800 - - V

Avalanche breakdown voltage

V

(BR)DS

V

GS

=0 V, I

D

=11 A

- 870 -

Gate threshold voltage

V

GS(th)

V

DS

=V

GS

, I

D

=0.68 mA

2.1 3 3.9

Zero gate voltage drain current

I

DSS

V

DS

=800 V, V

GS

=0 V,

T

j

=25 °C

- - 20 µA

V

DS

=800 V, V

GS

=0 V,

T

j

=150 °C

- 100 -

Gate-source leakage current

I

GSS

V

GS

=20 V, V

DS

=0 V

- - 100 nA

Drain-source on-state resistance

R

DS(on)

V

GS

=10 V, I

D

=7.1 A,

T

j

=25 °C

- 0.39 0.45

Ω

V

GS

=10 V, I

D

=7.1 A,

T

j

=150 °C

- 1.05 -

Gate resistance

R

G

f=1 MHz, open drain

- 1.2 -

Ω

Value

T

C

=25 °C

11

Values

Thermal resistance, junction -

ambient

Rev. 2.9

1 page 2 2011-09-27

SPP11N80C3

Parameter Symbol Conditions Unit

min. typ. max.

Dynamic characteristics

Input capacitance

C

iss

- 1600 - pF

Output capacitance

C

oss

- 65 -

Effective output capacitance, energy

C

o(er)

- 50 -

Effective output capacitance, time

C

o(tr)

- 140 -

Turn-on delay time

t

d(on)

- 25 - ns

Rise time

t

r

- 15 -

Turn-off delay time

t

d(off)

- 72 -

Fall time

t

f

- 10 -

Gate Charge Characteristics

Gate to source charge

Q

gs

- 8 - nC

Gate to drain charge

Q

gd

- 30 -

Gate charge total

Q

g

- 64 85

Gate plateau voltage

V

plateau

- 5.5 - V

Reverse Diode

Diode forward voltage

V

SD

V

GS

=0 V, I

F

=I

S

=11 A,

T

j

=25 °C

- 1 1.2 V

Reverse recovery time

t

rr

- 550 - ns

Reverse recovery charge

Q

rr

- 10 - µC

Peak reverse recovery current

I

rrm

- 33 - A

5)

C

o(er)

is a fixed capacitance that gives the same stored energy as C

oss

while V

DS

is rising from 0 to 80% V

DSS.

6)

C

o(tr)

is a fixed capacitance that gives the same charging time as C

oss

while V

DS

is rising from 0 to 80% V

DSS.

4)

I

SD

=I

D

, di/dt=200A/µs, V

DClink

= 400V, V

peak

<V

(BR)DSS

, T

j

<T

jmax

, identical low side and high side switch

V

R

=400 V,

I

F

=I

S

=11 A,

di

F

/dt=100 A/µs

2)

Pulse width t

p

limited by T

j,max

3)

Repetitive avalanche causes additional power losses that can be calculated as P

AV

=E

AR

*f.

1)

J-STD20 and JESD22

Values

V

GS

=0 V, V

DS

=100 V,

f=1 MHz

V

DD

=400 V,

V

GS

=0/10 V, I

D

=11 A,

R

G

=7.5 ?, T

j

=25 °C

V

DD

=640 V, I

D

=11 A,

V

GS

=0 to 10 V

V

GS

=0 V, V

DS

=0 V

to 480 V

Rev. 2.9

1 page 3 2011-09-27

SPP11N80C3XKSA1

SPP11N80C3XKSA1

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