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SPP11N80C3XKSA1

P1-P3P4-P6P7-P9P10-P10
SPP11N80C3
1 Power dissipation 2 Safe operating area
P
tot
=f(T
C
) I
D
=f(V
DS
); T
C
=25 °C; D=0
parameter: t
p
3 Max. transient thermal impedance 4 Typ. output characteristics
Z
thJC
=f(t
P
) I
D
=f(V
DS
); T
j
=25 °C; t
p
=10 µs
parameter: D=t
p
/T parameter: V
GS
0
20
40
60
80
100
120
140
160
0 25 50 75 100 125 150
T
C
[°C]
P
tot
[W]
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10
2
10
1
10
0
10
-1
1 10 100 1000
V
DS
[V]
I
D
[A]
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
-1
10
-2
10
-3
10
-4
10
-5
10
0
10
-1
10
-2
t
p
[s]
Z
thJC
[K/W]
4.5 V
5 V
5.5 V
6 V
10 V
20 V
0
10
20
30
40
0 5 10 15 20 25
V
DS
[V]
I
D
[A]
limited by on-state
resistance
Rev. 2.9
1 page 4 2011-09-27
SPP11N80C3
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
I
D
=f(V
DS
); T
j
=150 °C; t
p
=10 µs R
DS(on)
=f(I
D
); T
j
=150 °C
parameter: V
GS
parameter: V
GS
7 Drain-source on-state resistance 8 Typ. transfer characteristics
R
DS(on)
=f(T
j
); I
D
=7.1 A; V
GS
=10 V I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
; t
p
=10 µs
parameter: T
j
typ
98 %
0
0.2
0.4
0.6
0.8
1
1.2
-60 -20 20 60 100 140 180
T
j
[°C]
R
DS(on)
[
Ω
]
25 °C
150 °C
0
10
20
30
40
0 2 4 6 8 10
V
GS
[V]
I
D
[A]
6 V
10 V
20 V
4.5 V
5 V
5.5 V
0
3
6
9
12
15
18
21
0 5 10 15 20 25
V
DS
[V]
I
D
[A]
4 V
4.5 V
5 V
6 V
6.5 V
10 V
20 V
1
1.2
1.4
1.6
1.8
2
0 5 10 15 20 25 30
I
D
[A]
R
DS(on)
[
Ω
]
Rev. 2.9
1 page 5 2011-09-27
SPP11N80C3
9 Typ. gate charge 10 Forward characteristics of reverse diode
V
GS
=f(Q
gate
); I
D
=11 A pulsed I
F
=f(V
SD
); t
p
=10 µs
parameter: V
DD
parameter: T
j
11 Avalanche energy 12 Drain-source breakdown voltage
E
AS
=f(T
j
); I
D
=2.2 A; V
DD
=50 V V
BR(DSS)
=f(T
j
); I
D
=0.25 mA
25 °C
150 °C
150°C (98%)
25°C (98°C)
10
2
10
1
10
0
10
-1
0 0.5 1 1.5 2
V
SD
[V]
I
F
[A]
160 V
640 V
0
2
4
6
8
10
0 10 20 30 40 50 60 70
Q
gate
[nC]
V
GS
[V]
680
720
760
800
840
880
920
960
-60 -20 20 60 100 140 180
T
j
[°C]
V
BR(DSS)
[V]
0
100
200
300
400
500
25 50 75 100 125 150
T
j
[°C]
E
AS
[mJ]
Rev. 2.9
1 page 6 2011-09-27
P1-P3P4-P6P7-P9P10-P10

SPP11N80C3XKSA1

Mfr. #:
Buy SPP11N80C3XKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 800V 11A TO220-3 CoolMOS C3
Lifecycle:
New from this manufacturer.
Delivery:
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