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BGA5M1BN6E6327XTSA1

P1-P3P4-P6P7-P9P10-P12
Data Sheet Revision 2.2
www.infineon.com 2018-03-15
BGA5M1BN6
BGA5M1BN6
18dB High Gain Low Noise Amplifier for LTE Midband
Features
Application
The LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function
increases the overall system dynamic range and leads to more flexibility in the RF front-end.
In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to
the basestation the bypass mode can be activated reducing current consumption.
Product Validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
Block diagram
• Operating frequencies: 1805 - 2200 MHz
• Insertion power gain: 19.3 dB
• Insertion Loss in bypass mode: 4.7 dB
• Low noise figure: 0.65 dB
• Low current consumption: 9.5 mA
• Multi-state control: Bypass- and high gain-Mode
• Ultra small TSNP-6-10 leadless package
• RF output internally matched to 50 Ohm
• Low external component count
0.7 x 1.1 mm
2
BGA5M1BN6_Blockdiagram.vsd
AI AO
GND
CVCC
ESD
Data Sheet 2 Revision 2.2
2018-03-15
BGA5M1BN6
18dB High Gain Low Noise Amplifier for LTE Midband
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table of Contents
Data Sheet 3 Revision 2.2
2018-03-15
BGA5M1BN6
18dB High Gain Low Noise Amplifier for LTE Midband
Features
1 Features
Figure 1 Block Diagram
• Insertion power gain: 19.3 dB
• Insertion Loss in bypass mode: 4.7 dB
• Low noise figure: 0.65 dB
• Low current consumption: 9.5 mA
• Operating frequencies: 1805 - 2200 MHz
• Multi-state control: Bypass- and High gain-Mode
• Supply voltage: 1.5 V to 3.6 V
• Ultra small TSNP-6-10 leadless package (footprint: 0.7 x 1.1 mm
2
)
• B9HF Silicon Germanium technology
• RF output internally matched to 50 Ohm
• Low external component count
• Pb-free (RoHS compliant) package
Product Name Marking Package
BGA5M1BN6 5 TSNP-6-10
BGA5M1BN6_Blockdiagram.vsd
AI AO
GND
CVCC
ESD
P1-P3P4-P6P7-P9P10-P12

BGA5M1BN6E6327XTSA1

Mfr. #:
Buy BGA5M1BN6E6327XTSA1
Manufacturer:
Infineon Technologies
Description:
RF Amplifier RF SILICON MMIC
Lifecycle:
New from this manufacturer.
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