BGA5M1BN6E6327XTSA1

Data Sheet 10 Revision 2.2
2018-03-15
BGA5M1BN6
18dB High Gain Low Noise Amplifier for LTE Midband
Package Information
Figure 5 Marking Layout TSNP-6-10 (top view)
Figure 6 Date Code Marking TSNP-6-10
Figure 7 Tape & Reel Dimensions TSNP-6-10 (reel diameter 180 mm, pieces/reel 12000)
TSNP-6-10_MK.vsd
TSNP-6-10_TP.vsd
Pin 1
marking
Data Sheet 11 Revision 2.2
2018-03-15
BGA5M1BN6
18dB High Gain Low Noise Amplifier for LTE Midband
Revision History
Page or Item Subjects (major changes since previous revision)
Revision 2.2, 2018-03-15
all Update Package Information
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Edition 2018-03-15
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2018 Infineon Technologies AG.
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BGA5M1BN6E6327XTSA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
RF Amplifier RF SILICON MMIC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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