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2N5210TF

P1-P3P4-P6P7-P7
2N5210/MMBT5210
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1µA to 50 mA.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 50 V
V
CBO
Collector-Base Voltage 50 V
V
EBO
Emitter-Base Voltage 4.5 V
I
C
Collector Current - Continuous 100 mA
T
J
, T
st
g
Operating and Storage Junction Temperature Range -55 to +150
°
C
2N5210, Rev B
Max.
Symbol
Characteristic
2N5210 MMBT5210
Units
P
D
Total Device Dissipation
Derate above 25
°
C
625
5.0
350
2.8
mW
mW/
°
C
R
θJC
Thermal Resistance, Junction to Case 83.3
°
C/W
R
θJA
Thermal Resistance, Junction to Ambient 200 357
°C/W
2002 Fairchild Semiconductor Corporation
2N5210/MMBT5210
C
B
E
SOT-23
Mark: 3M
C
B
E
TO-92
3
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
V
(
BR
)
CEO
Collector-Emitter Breakdown Voltage I
C
= 1.0 mA, I
B
= 0 50 V
V
(
BR
)
CBO
Collector-Base Breakdown Voltage I
C
= 0.1 mA, I
E
= 0 50 V
I
CBO
Collector Cutoff Current V
CB
= 35 V, I
E
= 0 50 nA
I
EBO
Emitter Cutoff Current V
EB
= 3.0 V, I
C
= 0 50 nA
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 100
µ
A, V
CE
= 5.0 V
I
C
= 1.0 mA, V
CE
= 5.0 V
I
C
= 10 mA, V
CE
= 5.0 V*
200
250
250
600
V
CE(
sat
)
Collector-Emitter Saturation Voltage I
C
= 10 mA, I
B
= 1.0 mA 0.7 V
V
BE(
on
)
Base-Emitter On Voltage I
C
= 1.0 mA, V
CE
= 5.0 V 0.85 V
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= 500
µ
A,V
CE
= 5.0 V,
f= 20 MHz
30 MHz
C
cb
Collector-Base Capacitance V
CB
= 5.0 V, I
E
= 0, f = 100 kHz 4.0 pF
h
fe
Small-Signal Current Gain I
C
= 1.0 mA, V
CE
= 5.0 V,
f = 1.0 kHz
250 900
NF Noise Figure
I
C
= 20
µ
A, V
CE
= 5.0 V,
R
S
= 22 k
Ω
, f = 10 Hz to 15.7 kHz
I
C
= 20
µ
A, V
CE
= 5.0 V,
R
S
= 10 k
Ω
, f = 1.0 kHz
2.0
3.0
dB
dB
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NPN General Purpose Amplifier
(continued)
2N5210/MMBT5210
Typical Characteristics
Collector-Cutoff Current
vs Ambient Temperature
25 50 75 100 125 150
0.1
1
10
T - A MBIE NT TEMP ERATURE ( C)
I - C OLLE CTOR CU RR EN T (nA)
A
CBO
V = 45V
°
CB
2N5210/MMBT5210
NPN General Purpose Amplifier
(continued)
0.01 0.1 1 10 100
0
200
400
600
800
1000
1200
30
30.3
0.03
- 40
o
C
25
o
C
125
o
C
V
CE
= 5.0V
h
FE
- TYPICAL PULSED CURRENT GAIN
I
C
- COLLECTOR CURRENT (mA)
Typical Pulsed Current Gain
vs Collector Current
0.1 1 10 100
0.05
0.10
0.15
0.20
0.25
0.30
- 40
o
C
25
o
C
125
o
C
β
ββ
β
= 10
V
BEON
- BASE-EMITTER ON VOLTAGE (V)
I
C
- COLLECTOR CURRENT (mA)
Collector-Emitter Saturation
Voltage vs Collector Current
0.1 1 10 100
0.2
0.4
0.6
0.8
1.0
β
ββ
β
= 10
125
o
C
25
o
C
- 40
o
C
V
BESAT
- COLLECTOR-EMITTER VOLTAGE (V)
I
C
- COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
0.1 1 10
0.2
0.4
0.6
0.8
1.0
- 40
o
C
25
o
C
125
o
C
V
CE
= 5.0V
V
BEON
- BASE-EMITTER ON VOLTAGE (V)
I
C
- COLLECTOR CURRENT (mA)
Base-Emitter ON Voltage vs
Collector Current
P1-P3P4-P6P7-P7

2N5210TF

Mfr. #:
Buy 2N5210TF
Manufacturer:
ON Semiconductor / Fairchild
Description:
Bipolar Transistors - BJT NPN Transistor General Purpose
Lifecycle:
New from this manufacturer.
Delivery:
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