2N5210TF

3
Typical Characteristics (continued)
NPN General Purpose Amplifier
(continued)
Input and Output Capacitance
vs Reverse Bias Voltage
048121620
0
1
2
3
4
5
REVERSE BIAS VOLTAGE (V)
CAPACITANCE (pF)
f = 1.0 MHz
C
ob
C
te
Wideband Noise Frequency
vs Source Resistance
1,000 2,000 5,000 10,000 20,000 50,000 100,000
0
1
2
3
4
5
R - SOURCE RESISTANCE ( )
NF - NOISE FIGURE (dB)
V = 5.0 V
BANDWIDTH = 15.7 kHz
CE
I = 10
µ
µµ
µ
A
C
I = 100
µ
µµ
µ
A
C
S
I = 30
µ
µµ
µ
A
C
Contours of Constant Gain
Bandwidth Product (f )
0.1 1 10 100
1
2
3
5
7
10
I - COLLECTOR CURRENT (mA)
V - COLLECTOR VOLTAGE (V)
C
175 MHz
T
CE
150 MHz
125 MHz
75 MHz
100 MHz
Noise Figure vs Frequency
0.0001 0.001 0.01 0.1 1 10 100
0
2
4
6
8
10
f - FREQUENCY (MHz)
NF - NOISE FIGURE (dB)
V = 5.0V
CE
I = 200
µ
µµ
µ
A,
R = 10 k
C
S
I = 1.0 mA,
R = 500
C
S
I = 100
µ
µµ
µ
A,
R = 10 k
C
S
I = 1.0 mA,
R = 5.0 k
C
S
Normalized Collector-Cutoff Current
vs Ambient Temperature
25 50 75 100 125 150
1
10
100
1000
T - AMBIENT TEMPERATURE ( C)
CHARACTERISTICS RELATI VE TO VALUE AT T = 25 C
A
A
°
°
025507510012515
0
0.00
0.25
0.50
0.75
1.00
TO-92
SOT-23
P
D
- POWER DISSIPATION (W)
TEMPERATURE (
o
C)
Base-Emitter Saturation
Voltage vs Collector Current
2N5210/MMBT5210
Typical Characteristics (continued)
Contours of Constant
Narrow Band Noise Figure
1 10 100 1,000
100
200
500
1,000
2,000
5,000
10,000
I - COLLECTOR CURRENT ( A)
R - SOURCE RESISTANCE ( )
µ
µµ
µ
C
S
V = 5.0 V
f = 1.0 kHz
BANDWIDTH
= 200 Hz
CE
6.0 dB
3.0 dB
4.0 dB
8.0 dB
2.0 dB
Contours of Constant
Narrow Band Noise Figure
1 10 100 1,000
100
200
500
1,000
2,000
5,000
10,000
I - COLLECTOR CURRENT ( A)
R - SOURCE RESISTANCE ( )
µ
µµ
µ
C
S
V = 5.0 V
f = 100 Hz
BANDWIDTH
= 20 Hz
CE
3.0 dB
4.0 dB
8.0 dB
10 dB
12 dB
14 dB
6.0 dB
Contours of Constant
Narrow Band Noise Figure
1 10 100 1000
100
200
500
1000
2000
5000
10000
I - COLLECTOR CURRENT ( A)
R - SOURCE RESISTANCE ( )
6.0 dB
3.0 dB
4.0 dB
8.0 dB
2.0 dB
1.0 dB
C
V = 5.0V
f = 10kHz
BANDWIDTH
= 2.0kHz
CE
S
µ
µµ
µ
Contours of Constant
Narrow Band Noise Figure
0.01 0.1 1 10
100
200
500
1000
2000
5000
10000
I - COLLECTOR CURRENT ( A)
R - SOURCE RESISTANCE ( )
7.0 dB
3.0 dB
4.0 dB
8.0 dB
2.0 dB
5.0
dB
C
V =
5.0V
CE
S
µ
µµ
µ
f = 1.0 MHz
BANDWIDTH
= 200kHz
6.0
dB
NPN General Purpose Amplifier
(continued)
2N5210/MMBT5210
3
Typical Common Emitter Characteristics (f = 1.0 kHz)
NPN General Purpose Amplifier
(continued)
Typical Common Emitter Characteristics
0.1 0.2 0.5 1 2 5 10 20 50 100
0.01
0.1
1
10
100
I - COLLECTOR CURRENT (mA)
CHARACTERISTICS RELATIVE TO VALUE(I =1mA)
C
C
f = 1.0kHz
h
oe
h
oe
h and h
ie
h
fe
h
re
h
ie
h
fe
re
Typical Common Emitter Characteristics
-100 -50 0 50 100 150
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
T - JUNCTIO N TEMP ERATURE ( C)
CHARACTE RI STICS RE LATIV E TO VALUE(T =25 C)
J
A
°
h
oe
h
re
h
ie
h
fe
h
oe
h
re
h
ie
h
fe
V = 5.0V
f = 1.0kHz
I = 1.0mA
CE
C
°
Typical Common Emitter Characteristics
0 5 10 15 20 25
0.8
0.9
1
1.1
1.2
1.3
1.4
V - COLLECTOR VOLTAGE (V)
CHAR ACTERISTI CS RELATI VE TO VALU E(V =5V)
CE
CE
I = 1.0mA
f = 1.0kHz
T = 25 C
C
A
°
h
oe
h
oe
h
re
h
ie
h
fe
h
re
h
ie
h
fe
2N5210/MMBT5210

2N5210TF

Mfr. #:
Manufacturer:
ON Semiconductor / Fairchild
Description:
Bipolar Transistors - BJT NPN Transistor General Purpose
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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