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Dear Customer,
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T
O
-
2
2
0
A
B
PSMN2R0-60PSR
N-channel 60 V, 2.2 mΩ standard level MOSFET in TO-220
using Trench Technology
25 June 2014 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
Standard level gate drive N-channel enhancement mode MOSFET in TO-220 package
using advanced TrenchMOS technology. This product has been designed and qualified
to 175 °C for use in a wide range of industrial, communications and Power Supply
Equipment.
2. Features and benefits
Low Q
G
, Q
GD
and Q
OSS
for high system efficiency
High reliability TO-220 package
Qualified to 175 °C
Reflow solderable
3. Applications
Server and Telecom voltage regulator
DC-to-DC, POL and System Power
Motor Control
Power OR-ing
Sync Rectifier
Load switching
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 60 V
I
D
drain current T
mb
= 25 °C; V
GS
= 10 V; Fig. 2 [1] - - 120 A
P
tot
total power dissipation T
mb
= 25 °C; Fig. 1 - - 338 W
T
j
junction temperature -55 - 175 °C
Static characteristics
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 12
[2] - 1.8 2.2 R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A; T
j
= 100 °C;
Fig. 12; Fig. 13
- 3 3.5
NXP Semiconductors
PSMN2R0-60PSR
N-channel 60 V, 2.2 mΩ standard level MOSFET in TO-220 using
Trench Technology
PSMN2R0-60PSR All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 25 June 2014 2 / 13
Symbol Parameter Conditions Min Typ Max Unit
Dynamic characteristics
Q
GD
gate-drain charge - 32 45 nC
Q
G(tot)
total gate charge
V
GS
= 10 V; I
D
= 75 A; V
DS
= 30 V;
Fig. 14; Fig. 15
- 137 192 nC
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-
source avalanche
energy
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 120 A;
V
sup
≤ 60 V; R
GS
= 50 Ω; Unclamped
- - 913 mJ
[1] Continuous current limited by package
[2] Measured 3 mm from package.
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
2 D drain
3 S source
mb D mounting base; connected to
drain
1 2
mb
3
TO-220AB (SOT78)
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PSMN2R0-60PSR TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - 60 V
V
DGR
drain-gate voltage T
j
≥ 25 °C; T
j
≤ 175 °C; R
GS
= 20 kΩ - 60 V

PSMN2R0-60PSRQ

Mfr. #:
Manufacturer:
Nexperia
Description:
MOSFET PSMN2R0-60PSR/SIL3P/STANDARD M
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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