NXP Semiconductors
PSMN2R0-60PSR
N-channel 60 V, 2.2 mΩ standard level MOSFET in TO-220 using
Trench Technology
PSMN2R0-60PSR All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 25 June 2014 3 / 13
Symbol Parameter Conditions Min Max Unit
V
GS
gate-source voltage -20 20 V
P
tot
total power dissipation T
mb
= 25 °C; Fig. 1 - 338 W
V
GS
= 10 V; T
mb
= 100 °C; Fig. 2 [1] - 120 AI
D
drain current
V
GS
= 10 V; T
mb
= 25 °C; Fig. 2 [1] - 120 A
I
DM
peak drain current pulsed; t
p
≤ 10 µs; T
mb
= 25 °C; Fig. 3 - 1135 A
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
T
sld(M)
peak soldering temperature - 260 °C
Source-drain diode
I
S
source current T
mb
= 25 °C [1] - 120 A
I
SM
peak source current pulsed; t
p
≤ 10 µs; T
mb
= 25 °C - 1135 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 120 A;
V
sup
≤ 60 V; R
GS
= 50 Ω; Unclamped
- 913 mJ
[1] Continuous current limited by package
T
mb
(°C)
0 20015050 100
03aa16
40
80
120
P
der
(%)
0
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
003aaf754
0
60
120
180
240
300
0 50 100 150 200
T
mb
(
°
C)
I
D
(A)
(1)
Fig. 2. Continuous drain current as a function of
mounting base temperature.
