OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IRLR8726TRPBF

P1-P3P4-P6P7-P9P10-P11
www.irf.com 1
11/23/09
IRLR8726PbF
IRLU8726PbF
HEXFET
®
Power MOSFET
Notes through are on page 11
D-Pak
IRLR8726PbF
I-Pak
IRLU8726PbF
S
D
G
S
D
G
GDS
Gate Drain Source
D
D
Benefits
l Very Low R
DS(on)
at 4.5V V
GS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free
l RoHS compliant
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
V
DSS
R
DS(on)
max
Qg (typ.)
30V
5.8m
@V
GS
= 10V
15nC
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
P
D
@T
C
= 100°C
Maximum Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case
––– 2.0
R
θJA
Junction-to-Ambient (PCB Mount)
––– 50 °C/W
R
θJA
Junction-to-Ambient
––– 110
75
Max.
86
61
340
± 20
30
0.5
38
300 (1.6mm from case)
-55 to + 175
PD - 97146A
IRLR/U8726PbF
2 www.irf.com
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
∆ΒV
DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 20 ––– mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 4.0 5.8
m
Ω
––– 5.8 8.0
V
GS(th)
Gate Threshold Voltage 1.35 1.80 2.35 V
∆V
GS(th)
/∆T
J
Gate Threshold Voltage Coefficient ––– -8.6 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0 µA
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 73 ––– ––– S
Q
g
Total Gate Charge ––– 15 23
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 3.7 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 1.9 ––– nC
Q
gd
Gate-to-Drain Charge ––– 5.7 –––
Q
godr
Gate Charge Overdrive ––– 3.7 ––– See Fig. 15
Q
sw
Switch Charge (Q
gs2
+ Q
gd
) ––– 7.6 –––
Q
oss
Output Charge ––– 10 ––– nC
R
G
Gate Resistance ––– 2.0 3.5
Ω
t
d(on)
Turn-On Delay Time ––– 12 –––
t
r
Rise Time ––– 49 –––
t
d(off)
Turn-Off Delay Time ––– 15 ––– ns
t
f
Fall Time ––– 16 –––
C
iss
Input Capacitance ––– 2150 –––
C
oss
Output Capacitance ––– 480 ––– pF
C
rss
Reverse Transfer Capacitance ––– 205 –––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– –––
86
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 340
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 24 36 ns
Q
rr
Reverse Recovery Charge ––– 52 78 nC
ƒ = 1.0MHz
V
GS
= 4.5V, I
D
= 20A
V
GS
= 20V
V
GS
= -20V
V
DS
= V
GS
, I
D
= 50µA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 25A
MOSFET symbol
V
DS
= 15V, I
D
= 20A
V
DS
= 15V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 20A
V
DS
= 15V
Conditions
See Fig. 13
V
GS
= 4.5V
T
J
= 25°C, I
F
= 20A, V
DD
= 15V
di/dt = 300A/µs
T
J
= 25°C, I
S
= 20A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
Typ.
–––
–––
I
D
= 20A
V
GS
= 0V
V
DS
= 15V
R
G
= 1.8
Ω
Max.
120
20
IRLR/U8726PbF
www.irf.com 3
Fig 4. Normalized On-Resistance
vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤
60µs PULSE WIDTH
Tj = 25°C
2.5V
VGS
TOP 10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤
60µs PULSE WIDTH
Tj = 175°C
2.5V
VGS
TOP 10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
0.0 2.0 4.0 6.0 8.0
V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
V
DS
= 15V
≤ 60µs PULSE WIDTH
T
J
= 25°C
T
J
= 175°C
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 25A
V
GS
= 10V
P1-P3P4-P6P7-P9P10-P11

IRLR8726TRPBF

Mfr. #:
Buy IRLR8726TRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET 30V 1 N-CH HEXFET 5.8mOhms 15nC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet