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IRLR8726TRPBF
P1-P3
P4-P6
P7-P9
P10-P11
IRLR/U8726PbF
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
V
DS
, D
rain-
to-
Source V
olt
age (V)
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHO
RTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0
4
8
1
21
62
0
2
42
83
23
64
0
Q
G
Tot
al G
ate Char
ge (nC)
0
2
4
6
8
10
12
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 24V
V
DS
= 15V
I
D
= 20A
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
V
SD
, S
ource-t
o-Dr
ain V
olt
age (V)
0.1
1
10
100
1000
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°
C
T
J
= 175°
C
V
GS
= 0V
0.1
1
10
100
V
DS
, D
rain-
toS
ource Vol
tage (
V)
0.1
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
C
= 25°
C
T
J
= 175°
C
Si
ngle P
ulse
1msec
10msec
OPERATION
IN THIS AREA
LIMI
TE
D B
Y R
DS
(on)
100µsec
IRLR/U8726PbF
www.irf.com
5
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Threshold Voltage vs. Temperature
25
50
75
100
125
150
175
T
C
, C
ase Temper
ature (
°C)
0
20
40
60
80
100
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
LIM
ITED BY PACKAGE
-75
-50
-25
0
25
50
75
100
125
150
175
T
J
, T
emperat
ure ( °
C )
0.5
1.0
1.5
2.0
2.5
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 500µA
I
D
= 50µA
I
D
= 25µA
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
1
, R
ectangul
ar Pul
se Durat
ion (
sec)
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D =
0.50
0.02
0.01
0.05
SINGLE PUL
SE
( THERMAL RESPO
NSE )
Notes
:
1. Du
ty Fa
ctor D
= t1/t2
2. P
eak Tj
= P
dm x Zt
hjc +
Tc
Ri
(°
C/W
)
τι
(sec)
0.01
4297
0.00
0003
0.37
3312
0.00
009
1.01
0326
0.00
0973
0.60
2065
0.00
7272
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci
i
/
Ri
Ci
=
τ
i
/
Ri
τ
τ
C
τ
4
τ
4
R
4
R
4
IRLR/U8726PbF
6
www.irf.com
Fig 12a.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12c.
Unclamped Inductive Waveforms
Fig 12b.
Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
V
GS
25
50
75
100
125
150
175
St
arti
ng T
J
, Junct
ion T
emperat
ure (°
C)
0
100
200
300
400
500
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP
5
.6A
8.2
A
BOTTOM
20A
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(
off)
t
f
Fig 13a.
Switching Time Test Circuit
Fig 13b.
Switching Time Waveforms
V
DS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1
%
R
D
V
GS
R
G
D.U.T.
V
GS
+
-
V
DD
P1-P3
P4-P6
P7-P9
P10-P11
IRLR8726TRPBF
Mfr. #:
Buy IRLR8726TRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET 30V 1 N-CH HEXFET 5.8mOhms 15nC
Lifecycle:
New from this manufacturer.
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