IXTA26P20P IXTP26P20P
IXTP26P20P IXTQ26P20P
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
g
fs
V
DS
= -10V, I
D
= 0.5 • I
D25
, (Note 1) 10 17 S
C
iss
2920 pF
C
oss
V
GS
= 0V, V
DS
= -25V, f = 1MHz 540 pF
C
rss
100 pF
t
d(on)
18 ns
t
r
33 ns
t
d(off)
46 ns
t
f
21 ns
Q
g(on)
56 nC
Q
gs
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
18 nC
Q
gd
20 nC
R
thJC
0.5 °C/W
R
thCS
(TO-3P)(TO-247) 0.21 °C/W
(TO-220) 0.25 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
I
S
V
GS
= 0V - 26 A
I
SM
Repetitive - 104 A
V
SD
I
F
= -13A, V
GS
= 0V, Note 1 - 3.0 V
t
rr
240 ns
Q
RM
2.20 μC
I
RM
-18.0
A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Resistive Switching Times
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 3.3Ω (External)
I
F
= -13A, -di/dt = -100A/μs
V
R
= -100V, V
GS
= 0V
