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IXTP26P20P

P1-P3P4-P6
IXTA26P20P IXTP26P20P
IXTP26P20P IXTQ26P20P
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 1. Output Characteristics
@ 25ºC
-28
-24
-20
-16
-12
-8
-4
0
-4.5-4.0-3.5-3.0-2.5-2.0-1.5-1.0-0.50.0
V
DS
- Volts
I
D
- Amperes
V
GS
= -10
V
-8
V
-5
V
-6
V
-7
V
Fig. 2. Extended Output Characteristics
@ 25ºC
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
-30-27-24-21-18-15-12-9-6-30
V
DS
- Volts
I
D
- Amperes
V
GS
= -10
V
-9
V
-8
V
-6
V
-7
V
-5
V
Fig. 3. Output Characteristics
@ 150ºC
-28
-24
-20
-16
-12
-8
-4
0
-10-9-8-7-6-5-4-3-2-10
V
DS
- Volts
I
D
- Amperes
V
GS
= -10
V
-8
V
-6
V
-5
V
-7
V
Fig. 4. R
DS(on)
Normalized to I
D
= -13A vs.
Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= -10V
I
D
= -26
A
I
D
= -13
A
Fig. 5. R
DS(on)
Normalized to I
D
= -13A vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
-90-80-70-60-50-40-30-20-100
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= -10V
-15V
- - - -
T
J
= 25ºC
T
J
= 175ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
I
D
- Amperes
© 2007 IXYS CORPORATION, All rights reserved
Fig. 7. Input Admittance
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
-7-6.5-6-5.5-5-4.5-4-3.5-3
V
GS
- Volts
I
D
- Amperes
T
J
= - 40ºC
25ºC
150ºC
Fig. 8. Transconductance
0
4
8
12
16
20
24
28
32
-50-45-40-35-30-25-20-15-10-50
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
150ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
-80
-70
-60
-50
-40
-30
-20
-10
0
-4-3.5-3-2.5-2-1.5-1-0.5
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0 5 10 15 20 25 30 35 40 45 50 55 60
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= -100V
I
D
= - 13A
I
G
= -1mA
Fig. 11. Capacitance
10
100
1,000
10,000
-40-35-30-25-20-15-10-50
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC
-
-
-
---
100ms
IXTA26P20P IXTP26P20P
IXTP26P20P IXTQ26P20P
IXTA26P20P IXTP26P20P
IXTP26P20P IXTQ26P20P
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 13. Maximum Transient Thermal Impedance
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
IXYS REF: T_26P20P(B5)10-10-07
P1-P3P4-P6

IXTP26P20P

Mfr. #:
Buy IXTP26P20P
Manufacturer:
Littelfuse
Description:
MOSFET -26.0 Amps -200V 0.170 Rds
Lifecycle:
New from this manufacturer.
Delivery:
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