IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 180N085T7
Symbol Test Conditions Characteristic Values
(T
J
= 25° C unless otherwise specified) Min. Typ. Max.
g
fs
V
DS
= 10 V; I
D
= 60 A, Note 1 70 120 S
C
iss
7500 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 930 pF
C
rss
200 pF
t
d(on)
Resistive Switching Times 32 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 25A 70 ns
t
d(off)
R
G
= 5 Ω (External) 55 ns
t
f
65 ns
Q
g(on)
170 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 25 A 40 nC
Q
gd
46 nC
R
thJC
0.35° C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
T
J
= 25° C unless otherwise specified) Min. Typ. Max.
I
S
V
GS
= 0 V 180 A
I
SM
Pulse width limited by T
JM
480 A
V
SD
I
F
= 25 A, V
GS
= 0 V, Note 1 1.0 V
t
rr
I
F
= 25 A, -di/dt = 100 A/µs90ns
V
R
= 40 V, V
GS
= 0 V
Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %.
Pins: 1 - Gate
2, 3 - Source
4 - Drain
5,6,7 - Source
Tab (8) - Drain
TO-263 (7-lead) (IXTA...7) Outline
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 7,071,537
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
