© 2006 IXYS CORPORATION All rights reserved
IXTA180N085T7
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
20
30
40
50
60
70
80
90
24 26 28 30 32 34 36 38 40 42 44 46 48 50
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 5
Ω
V
GS
= 10V
V
DS
= 43V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
0
20
40
60
80
100
120
140
4 6 8 10 12 14 16 18 20
R
G
- Ohms
t
r
- Nanoseconds
32
36
40
44
48
52
56
60
t
d ( o n )
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 43V
I
D
= 50A
I
D
= 25A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
46
48
50
52
54
56
58
60
62
64
66
68
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
50
54
58
62
66
70
74
78
82
86
90
94
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 5
Ω
, V
GS
= 10V
V
DS
= 43V
I
D
= 25A
I
D
= 25A, 50A
I
D
= 50A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
44
48
52
56
60
64
68
72
24 28 32 36 40 44 48
I
D
- Amperes
t
f
- Nanoseconds
44
52
60
68
76
84
92
100
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 5
Ω
, V
GS
= 10V
V
DS
= 43V
T
J
= 125ºC
T
J
= 25ºC
T
J
= 125ºC
T
J
= 25ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
20
30
40
50
60
70
80
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 5
Ω
V
GS
= 10V
V
DS
= 43V
I
D
= 50A
I
D
= 25A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
40
60
80
100
120
140
160
4 6 8 101214161820
R
G
- Ohms
t
f
- Nanoseconds
60
100
140
180
220
260
300
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 43V
I
D
= 50A
I
D
= 25A
IXYS REF: T_180N085T (5V) 6-13-06.xls
