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AMMC-6431-W10

P1-P3P4-P6P7-P9
AMMC-6431
25-33 GHz 0.7W Power Amplifier MMIC
Data Sheet
Description
The AMMC-6431 is an MMIC power amplifier designed for
use in wireless transmitters that operate within a 25GHz
and 33GHz range. At 32GHz, it provides 28.5dBm of output
power
(1)
and 19.5dB of small-signal gain from a small easy-
to-use device. This MMIC is optimized for linear operation
with an output third order intercept point (OIP3) of 37dBm.
The device has input and output matching circuitry
for use in 50Ω environments. The AMMC-6431 also has
integrated, temperature compensated RF power detection
circuitry that enables power detection of 0.3V/Watt at
30GHz.
Features
• MMIC bare die
• 0.7 watt output power (P-1)
• 50 Ω match on input and output
Typical Performance (Vd=5V, Idsq=0.65A)
• Frequency range 25 to 33 GHz
• Small signal Gain of 19dB
• Output power @ P-1 of 28.5dBm (Typ.)
• Input/Output return-loss of -15dB/-15dB
Applications
• Microwave Radio systems
• Satellite VSAT, Up/Down Link
• LMDS & Pt-Pt mmW Long Haul
• WLL and MMDS loops
Note:
1. This MMIC uses depletion mode pHEMT devices. Negative supply is
used for DC gate biasing.
Attention: Observe Precautions for
handling electrostatic sensitive devices.
Vdd and Vgg Pins: ESD Machine Model
(Class A): 50V
Vdd and Vgg Pins: ESD Human Body Model
(Class 0): 150V
Detector Pins: ESD Machine Model <20V
Detector Pins: ESD Human Body Model <60V
Refer to Avago Application Notes A004R
Electrostatic Discharge Damage and
ControlRefer to Avago Application Note
A004R:
Electrostatic Discharge Damage and Control.
Chip Size: 2500 x 1870 μm (100 x 74 mils)
Chip Size Tolerance: ± 10 μm (± 0.4 mils)
Chip Thickness: 100 ± 10 μm (4 ± 0.4 mils)
Pad Dimensions: 100 x 100 μm (4 x 4 ± 0.4 mils)
2
Table 1. Absolute Maximum Ratings
[1,2,3,4, and 5]
Symbol Parameters Unit Max Notes
V
d
-V
g
Drain to Gate Voltage V 8
V
d
Positive Supply Voltage
[2]
V 5.5 2
V
g
Gate Supply Voltage V -2.5 to 0.5
I
d
Drain Current
[2]
A 1.1 2,3
P
D
Power Dissipation
[2,3]
W 3.85 2,3
P
in
CW Input Power
[2]
dBm 15.5 2
T
ch
Operating Channel Temp.
[4,5]
°C +150 4,5
T
stg
Storage Case Temp. °C -65 to +150
T
max
Maximum Assembly Temp (30 sec max) °C +300
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device. Functional operation at or near these limitations
will change to may significantly reduce the lifetime of the device.
2. Combinations of supply voltage, drain current, input power, and output power shall not exceed P
D
.
3. When operated at this condition with a base plate temperature of 85°C, the median time to failure (MTTF) is significantly reduced.
4. These ratings apply to each individual FET.
5. The operating channel temperature will directly affect the device MTTF. For maximum life, it is recommended that junction temperatures be
maintained at the lowest possible levels.
Table 2. DC Specifications/ Physical Properties
[1]
Symbol Parameters and Test Conditions Units
I
d
Drain Supply Current (V
d
= 5 V, V
g
set for I
d
Typical) mA 650
V
g
Gate Supply Operating Voltage (I
d(Q)
= 650 (mA)) V -1.0
I
g
Gate Supply Current (V
g
= -1V set for I
d
Typical) mA -0.10
Rθ
jc
Thermal Resistance
[6]
(Channel-to-Backside) °C/W 16.8
Note:
1. Assume conductive epoxy attachment to an evaluation RF board at 85°C base plate temperatures.
Table 3. Thermal Properties
Parameter Test Conditions Value
Maximum Power Dissipation Tbaseplate = 85°C P
D
= 3.85W
Tchannel = 150°C
Thermal Resistance (θjc)
Vd = 5V
Id = 650mA
P
D
= 3.25W
Tbaseplate = 85°C
θjc = 16.8°C/W
Tchannel = 139.6°C
Thermal Resistance (θjc)
Under RF Drive
Vd = 5V
Id = 790mA
Pout = 24dBm
Pd = 3.7W
Tbaseplate = 85°C
θjc = 16.8°C/W
Tchannel = 147.14°C
3
Table 4. RF Specifications
[1 and 2]
T
A
= 25°C, V
d
= 5 V, I
d(Q)
= 650 mA, Z
o
= 50 Ω
Symbol Parameters and Test Conditions Units Minimum Typical Maximum
Freq Operational Frequency GHz 25 33
Gain Small-signal Gain
[3]
dB 16.5 19
P
-1dB
Output Power at 1dB
Gain Compression
[3]
dBm 26.5 28.5
OIP3 Output Third Order Intercept Point
[4]
dBm 38
RL
in
Input Return Loss dB -15
RL
out
Output Return Loss dB -15
Isolation Reverse Isolation dB 43
Notes:
1. Small/Large -signal data measured in on-wafer environment at T
A
= 25°C.
2. This die part performance is verified by a functional test correlated to actual performance at one or more frequencies.
3. Performance verified 100% on-wafer for published specifications at Frequencies=27, 29.5, and 32GHz.
4. OIP3 data is at -20dBm, SCL (SCL=single carrier level).
Typical distribution of Small Signal Gain and Output Power@P-1dB.
Based on 1500 part sampled over several production lots.
Gain @ 29.5GHz Gain @ 32GHz
P1dB @ 29.5GHz P1dB @ 32GHz
17 18 19 20 21
27 28 29 3027 28 29 30
LSL
LSL LSL
17 18 19 20
LSL
P1-P3P4-P6P7-P9

AMMC-6431-W10

Mfr. #:
Buy AMMC-6431-W10
Manufacturer:
Broadcom / Avago
Description:
RF Amplifier Amp MMIC 26-33GHz
Lifecycle:
New from this manufacturer.
Delivery:
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