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TN4015H-6G-TR

P1-P3P4-P6P7-P9
August 2016
DocID029588 Rev 1
1/9
This is information on a product in full production.
www.st.com
TN4015H-6G
High temperature 40 A SCRs
Datasheet - production data
Features
High junction temperature : T
j
= 150 °C
High noise immunity dV/dt = 500 V/µs up to
150 °C
Gate triggering current I
GT
= 15 mA
Off-sate voltage 600 V V
DRM
/V
RRM
High turn on current rise dI/dt = 100 A/µs
ECOPACK
®
2 compliant component
Applications
Motorbike voltage regulator circuits
Inrush current limiting circuit
Motor control circuits and starters
Solid state relays
Description
Thanks to its junction temperature T
j
up to
150 °C, the device offers high thermal
performances operation up to 40 A. Its D2PAK
package allows modern SMD designs as well as
compact back to back configuration.
Its trade-off noise immunity (dV/dt = 500 V/μs)
versus its gate triggering current (I
GT
= 15 mA)
and its turn-on current rise (dI/dt = 100 A/μs)
allows to design robust and compact control
circuit for voltage regulator in motorbikes and
industrial drives, overvoltage crowbar protection,
motor control circuits in power tools and kitchen
aids, inrush current limiting circuits.
Table 1: Device summary
Order code
V
DRM
/V
RRM
I
GT
TN4015H-6G
D²PAK
600 V
15 mA
D²PAK
A
A
K
G
A
K
G
Characteristics
TN4015H-6G
2/9
DocID029588 Rev 1
1 Characteristics
Table 2: Absolute maximum ratings (limiting values), T
j
= 25 °C unless otherwise specified
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (180 ° conduction angle)
T
c
= 119 °C
40
A
I
T(AV)
Average on-state current (180 ° conduction angle)
T
c
= 120 °C
25
A
T
c
= 125 °C
22
T
c
= 128 °C
20
I
TSM
Non repetitive surge peak on-state current
t
p
= 8.3 ms
394
A
t
p
= 10 ms
360
I
2
t
I
2
t value for fusing
t
p
= 10 ms
648
A
2
s
dl/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr ≤ 100 ns
f = 60 Hz
100
A/µs
V
DRM
/V
RRM
Repetitive peak off-state voltage
T
j
= 150 °C
600
V
V
DSM
/V
RSM
Non repetitive surge peak off-state voltage
t
p
= 10 ms
V
DRM
/V
RRM
+ 100
V
I
GM
Peak gate current
t
p
= 20 µs
T
j
= 150 °C
4
A
P
G(AV)
Average gate power dissipation
T
j
= 150 °C
1
W
V
RGM
Maximum peak reverse gate voltage
5
V
T
stg
Storage junction temperature range
-40 to +150
°C
T
j
Maximum operating junction temperature
-40 to +150
°C
T
L
Maximum lead temperature soldering during 10 s
260
°C
Table 3: Electrical characteristics (T
j
= 25 °C unless otherwise specified)
Symbol
Test Conditions
Value
Unit
I
GT
V
D
= 12 V, R
L
= 33 Ω
Max.
15
mA
V
GT
Max.
1.3
V
V
GD
V
D
= V
DRM
, R
L
= 3.3 kΩ
T
j
= 150 °C
Min.
0.15
V
I
H
I
T
= 500 mA, gate open
Max.
60
mA
I
L
I
G
= 1.2 x I
GT
Max.
80
mA
dV/dt
V
D
= 402 V, gate open
T
j
= 150 °C
Min.
500
V/µs
t
gt
I
T
= 80 A, V
D
= 600 V, I
G
= 100 mA, (dI
G
/dt) max = 0.2 A/µs
Typ.
1.9
µs
t
q
V
D
= 402 V, I
T
= 40 A, V
R
= 25 V, dV
D
/dt = 50 V/µs,
(dI
G
/dt)max = 30 A/µs
T
j
= 150 °C
Typ.
85
µs
TN4015H-6G
Characteristics
DocID029588 Rev 1
3/9
Table 4: Static characteristics
Symbol
Test conditions
Value
Unit
V
TM
I
TM
= 80 A, t
p
= 380 µs
T
j
= 25 °C
Max.
1.6
V
V
TO
Threshold voltage
T
j
= 150 °C
Max.
0.85
R
D
Dynamic resistance
T
j
= 150 °C
Max.
10
mΩ
I
DRM
,
I
RRM
V
D
= V
DRM
= V
RRM
T
j
= 25 °C
Max.
10
µA
T
j
= 150 °C
6
mA
Table 5: Thermal parameters
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case (DC)
Max.
0.8
°C/W
R
th(j-a)
Junction to ambient (DC)
S
(1)
= 1 cm²
Typ.
45
Notes:
(1)
S = Copper surface under tab
P1-P3P4-P6P7-P9

TN4015H-6G-TR

Mfr. #:
Buy TN4015H-6G-TR
Manufacturer:
STMicroelectronics
Description:
SCRs High Temperature 40A SCRs
Lifecycle:
New from this manufacturer.
Delivery:
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