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TN4015H-6G-TR

P1-P3P4-P6P7-P9
Characteristics
TN4015H-6G
4/9
DocID029588 Rev 1
1.1 Characteristics (curves)
Figure 1: Maximum average power dissipation
versus average on-state current
Figure 2: Average and DC on-state current versus
case temperature
Figure 3: Average and D.C. on state current versus
ambient temperature
Figure 4: Relative variation of thermal impedance
versus pulse duration
Figure 5: Relative variation of gate trigger current
and gate voltage versus junction temperature
(typical values)
Figure 6: Relative variation of holding and latching
current versus junction temperature (typical
values)
0
10
20
30
40
0 5 10 15 20 25 30 35
α = 30°
α = 60°
α = 90°
α = 120°
α = 180°
D.C
P(W)
I
T(AV)
(A)
360°
α
0
10
20
30
40
50
0 25 50 75 100 125 150
D.C
α = 180°
α = 30 °
α = 60 °
α = 90 °
α = 120°
T
C
(°C)
I
T(AV)
(A)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 25 50 75 100 125 150
T
a
(°C)
D.C
α = 180 °
I
T(AV)
(A)
t
p
(s)
K = [Z
th
/R
th
]
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
Z
th(j-c)
Z
th(j-a)
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125 150
I
GT
V
GT
I
GT
, V
GT
[T
j
] / I
GT
, V
GT
[T
j
= 25 °C]
T
j
(°C)
0.0
0.3
0.5
0.8
1.0
1.3
1.5
1.8
2.0
2.3
2.5
-50 -25 0 25 50 75 100 125 150
I
H
I
L
I
H
, I
L
[T
j
] / I
H
, I
L
[T
j
= 25 °C]
T
j
(°C)
TN4015H-6G
Characteristics
DocID029588 Rev 1
5/9
Figure 7: Relative variation of static dV/dt
immunity versus junction temperature
(typical values)
Figure 8: Surge peak on-state current versus
number of cycles
Figure 9: Non repetitive surge peak on-state
current for a sinusoidal pulse with width tp < 10 ms
Figure 10: On-state characteristics
(maximum values)
Figure 11: Relative variation of leakage current
versus junction temperature
Figure 12: Thermal resistance junction to ambient
versus copper surface under tab
0
1
2
3
4
5
6
7
8
9
10
11
12
90 95 100 105 110 115 120 125 130 135 140 145 150
T
j
(°C)
dV/dt [ T
j
] / dV/dt [ T
j
= 150 °C ]
Above test equipment capability
V
D
= 402 V
Number of cycles
0
1 10 100 1000
Non repetitive
T
j
initial = 25 °C
Repetitive
T
c
= 119 °C
I
TSM
(A)
50
100
150
200
250
300
350
400
450
t =10ms
p
One cycle
10
100
1000
10000
0.01 0.10 1.00 10.00
t
p
(ms)
dI/dt limitation: 100 A/µs
I
TSM
T
j
initial = 25 °C
I
TSM
(A)
1
10
100
1000
0.0 1.0 2.0 3.0 4.0
V
TM
(V)
T
j
max :
V
TO
= 0.85 V
R
d
= 10 mΩ
T
j
= 25 °CT
j
= 150 °C
I
TM
(A)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
25 50 75 100 125 150
V
DRM
= V
RRM
= 600 V
I
DRM
, I
RRM
[T
j
; V
DRM
, V
RRM
] / I
DRM
, I
RRM
[150 °C; 600 V]
T
j
(°C)
0
0 84
12
28
20
36
16
32
24
40
10
20
30
40
50
60
70
80
S(cm²)
R (°C/W)
th(j-a)
Printed circuit board F4, copper thickness = 35 µm
D²PAK
Package information
TN4015H-6G
6/9
DocID029588 Rev 1
2 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
Epoxy meets UL94, V0
Lead-free, halogen-free package
2.1 D²PAK package information
Figure 13: D²PAK package outline
P1-P3P4-P6P7-P9

TN4015H-6G-TR

Mfr. #:
Buy TN4015H-6G-TR
Manufacturer:
STMicroelectronics
Description:
SCRs High Temperature 40A SCRs
Lifecycle:
New from this manufacturer.
Delivery:
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