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TS652
3/9
ELECTRICAL CHARACTERISTICS. V
CC
= ±6Volts, T
amb
= 25°C (unless otherwise specified).
Symbol Parameter Test Condition Min. Typ. Max Unit
DC PERFORMANCE
V
i
Voltage on the Input Pin 0 V
I
CC
Total Supply Current
No load, V
out
= 0
28 mA
∆
V
OFFSET
Differential Input Offset Voltage
V
in
= 0, A
V
= 30dB
6mV
SVR Supply Voltage Rejection Ratio
A
V
= 0dB
50 80 dB
POWER DOWN MODE
V
pdw
Thershold Voltage for Power
Down Mode (high level active)
Low Level 0 0.8 V
High Level 2 3.3 V
I
ccpdw
Power Down Total Consumption Power Down Mode 150
µ
A
Z
out
Power Down Output Impedance Power Down Mode 100k
Ω
150k
Ω
//5pF
AC PERFORMANCE
Z
in
Input Impedance 100k
Ω
//5pF
V
OH
High Level Output Voltage
R
L
connected to GND
R
L
= 500
Ω
4 4.5 V
V
OL
Low Level Output Voltage
R
L
connected to GND
R
L
= 500
Ω
-4.5 -4 V
A
V
Voltage Gain F= 1MHz
-9 30 dB
Gain monotonicity guaranteed by design
P
AV
Precision of the Voltage Gain F= 1MHz -1 1 dB
A
vstep
Step Value F= 1MHz 2.4 3 3.6 dB
A
vmin
Gain Mismatch between Both
Channels
F= 1MHz 1 dB
B
w
Bandwidth @ -3dB
R
L
= 500
Ω
C
L
= 15pF
A
V
= -9dB
55 110 200
MHz
A
V
= 0dB
32 69 132
A
V
= +18dB
26 52 100
A
V
= +30dB
10 18 36
R
bw
Bandwidth Roll-off
A
V
= +30dB, F = 1MHz
0.08 dB
I
o
Bandwidth @ -3dB
R
L
= 500
Ω
, C
L
= 15pF
|Source| 17 28
mA
Sink 17 22
SR Slew Rate (gain independent)
V
o
= 2Vpeak
50 100 V/
µ
s
NOISE AND DISTORTION
in Equivalent Input Noise Current F = 100kHz 1.5 pA/
√
Hz
en Equivalent Input Noise Voltage
F = 100kHz
A
V
= 30dB
4.6 nV/
√
Hz
THD30 Harmonic Distorsion
1Vpeak, F = 150kHz,
A
V
= +30dB, R
L
= 500
Ω
//15pF
dBc
H2 -70
H3 -93
H4 -98
H5 -99
IM3
Third Order Intermodulation
Product
F1 = 180kHz, F2 = 280kHz
V
out
= 1Vpeak, A
V
= +30dB
R
L
= 500
Ω
//15pF
dBc
@ 80kHz -77
@ 380kHz -85
@640kHz -86
@740kHz -87
IM3
Third Order Intermodulation
Product
F1 = 70kHz, F2 = 80kHz
V
out
= 1Vpeak, A
V
= +30dB
R
L
= 500
Ω
//15pF
dBc
@ 60kHz -77
@ 90kHz -79
@220kHz -83
@230kHz -84
