OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BT151X-800R/DG,127

P1-P3P4-P6P7-P9P10-P12P13-P13
NXP Semiconductors
BT151X-800R
SCR
BT151X-800R All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 16 March 2014 3 / 12
Symbol Parameter Conditions Min Max Unit
dI
T
/dt rate of rise of on-state current I
T
= 20 A; I
G
= 50 mA; dI
G
/dt = 50 mA/
µs
- 50 A/µs
I
GM
peak gate current - 2 A
V
RGM
peak reverse gate voltage - 5 V
P
GM
peak gate power - 5 W
P
G(AV)
average gate power over any 20 ms period - 0.5 W
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 125 °C
0
0
3
aaj922
0
1
0
2
0
3
0
4
0
5
0
6
0
1
0
-
2
1
0
-
1
1
10
s
u
rg
e
d
u
ra
t
io
n
(s
)
I
T
(
R
M
S
)
(
A
)
Fig. 1. RMS on-state current as a function of surge
duration; maximum values
T
h
(°C)
-50 1501000 50
003aaj923
8
4
12
16
I
T(RMS)
(A)
0
69 °C
Fig. 2. RMS on-state current as a function of heatsink
temperature; maximum values
NXP Semiconductors
BT151X-800R
SCR
BT151X-800R All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 16 March 2014 4 / 12
I
T(AV)
(A)
0 8642
003aaj919
5
10
15
P
tot
(W)
0
102.5
80
57.5
T
h(max)
(°C)
125
a = 1.57
4
2.8
2.2
1.9
conduction
angle
(degrees)
form
factor
a
30
60
90
120
180
4
2.8
2.2
1.9
1.57
α
Fig. 3. Total power dissipation as a function of average on-state current; maximum values
003aaj920
80
40
120
160
I
TSM
(A)
0
n (number of cycles)
1 10
3
10
2
10
t
p
T
j(init)
= 25 °C max
I
T
I
TSM
t
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
NXP Semiconductors
BT151X-800R
SCR
BT151X-800R All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 16 March 2014 5 / 12
003aaj921
t
p
(s)
10
-5
10
-2
10
-3
10
-4
10
2
10
3
I
TSM
(A)
10
(1)
t
p
T
j(init)
= 25 °C max
I
T
I
TSM
t
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
with heatsink compound; Fig. 6 - - 4.5 K/WR
th(j-h)
thermal resistance
from junction to
heatsink
without heatsink compound; Fig. 6 - - 6.5 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air - 55 - K/W
003aaj933
10
-1
10
-2
1
10
Z
th(j-h)
(K/W)
10
-3
t
p
(s)
10
-5
1 1010
-1
10
-2
10
-4
10
-3
t
p
t
p
T
P
t
T
δ =
(2)
(1)
(1) Without heatsink compound
(2) With heatsink compound
Fig. 6. Transient thermal impedance from junction to heatsink as a function of pulse width
P1-P3P4-P6P7-P9P10-P12P13-P13

BT151X-800R/DG,127

Mfr. #:
Buy BT151X-800R/DG,127
Manufacturer:
WeEn Semiconductors
Description:
SCRs THYRISTOR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet